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    FET TRANSISTOR GUIDE Search Results

    FET TRANSISTOR GUIDE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    FET TRANSISTOR GUIDE Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FET / Transistor Guide
    		NEC Transistor Selection Guide Original PDF 89.65KB 12

    FET TRANSISTOR GUIDE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C10535E

    Abstract: MEI-1202 PA505T marking FA fet transistor
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA505T N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +0.1 –0.05 • Two source common MOS FET circuits in package the


    Original     		PA505T SC-59 PA505T C10535E MEI-1202 marking FA fet transistor PDF

    marking ia

    Abstract: uPA602T C10535E MEI-1202 PA602T PA603T
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA602T N-CHANNEL MOS FET 6-PIN 2 CIRCUITS The µPA602T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET circuits. It achieves high-density mounting and • Two MOS FET circuits in package the same size as


    Original     		PA602T PA602T SC-59 PA603T marking ia uPA602T C10535E MEI-1202 PA603T PDF

    2SK1824

    Abstract: C10535E MEI-1202
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1824 N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical type MOS FET that is PACKAGE DIMENSIONS in mm driven at 2.5 V. 0.1 +0.1 –0.05 0.3 ± 0.05 Because this MOS FET can be driven on a low voltage and


    Original     		2SK1824 2SK1824 C10535E MEI-1202 PDF

    2SJ243

    Abstract: C10535E MEI-1202
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ243 P-CHANNEL MOS FET FOR SWITCHING The 2SJ243 is a P-channel vertical type MOS FET that is driven PACKAGE DIMENSIONS in mm at 2.5 V. 0.3 ± 0.05 Because this MOS FET can be driven on a low voltage and 0.1 +0.1 –0.05


    Original     		2SJ243 2SJ243 C10535E MEI-1202 PDF

    2SK1583

    Abstract: IEI-1213 MEI-1202 TC-2297B
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1583 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm The 2SK1583 is an N-channel vertical type MOS FET which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con­


    OCR Scan     		2SK1583 IEI-1213 MEI-1202 TC-2297B PDF

    transistor k 4212 fet

    Abstract: S211S NE23383B
    Contextual Info: PRELIMINARY DATA SHEET_ \ | F f ~ / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE23383B L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE23383B is a Hereto Junction FET that utilizes the {Unit : mm


    OCR Scan     		NE23383B NE23383B transistor k 4212 fet S211S PDF

    transistor k 4212 fet

    Abstract: gd 361 transistor
    Contextual Info: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE23383B L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE23383B is a Herero Junction FET that utilizes the Unit : mm


    OCR Scan     		NE23383B NE23383B transistor k 4212 fet gd 361 transistor PDF

    transistor d 2389

    Contextual Info: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm


    OCR Scan     		NE24283B NE24283B transistor d 2389 PDF

    TC-2329A

    Abstract: F16V 2SJ207 IEI-1213 iei-1209
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHAIMNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con­


    OCR Scan     		2SJ207 2SJ207, TC-2329A F16V 2SJ207 IEI-1213 iei-1209 PDF

    uPA602T

    Abstract: C10535E MEI-1202 PA602T PA603T 6 PIN case mos fet p-channel UPA603T
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA603T P-CHANNEL MOS FET 6-PIN 2 CIRCUITS The µPA603T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET circuits. It achieves high-density mounting and 2.8 ±0.2 FEATURES • Two MOS FET circuits in package the same size as


    Original     		PA603T PA603T SC-59 PA602T uPA602T C10535E MEI-1202 PA602T 6 PIN case mos fet p-channel UPA603T PDF

    a1270* transistor

    Abstract: computer controlled infrared M113 C-15 IEEE488 diode ed 2437 AT-8141
    Contextual Info: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2


    Original     		R123-R181, 5091-6489E 5968-1410E a1270* transistor computer controlled infrared M113 C-15 IEEE488 diode ed 2437 AT-8141 PDF

    PH4840S

    Contextual Info: PH4840S N-channel TrenchMOS intermediate level FET Rev. 02 — 6 November 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features


    Original     		PH4840S PH4840S PDF

    MTD9N10E

    Abstract: SMD310 AN569 MTD6N10 MTD9N10E-D
    Contextual Info: MOTOROLA Order this document by MTD9N10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD9N10E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET


    Original     		MTD9N10E/D MTD9N10E MTD9N10E/D* MTD9N10E SMD310 AN569 MTD6N10 MTD9N10E-D PDF

    paste

    Abstract: AN569 MTD3N25E SMD310
    Contextual Info: MOTOROLA Order this document by MTD3N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD3N25E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET


    Original     		MTD3N25E/D MTD3N25E MTD3N25E/D* paste AN569 MTD3N25E SMD310 PDF

    NEC k 2134 transistor

    Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
    Contextual Info: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm


    OCR Scan     		NE24283B NE24283B NEC k 2134 transistor nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612 PDF

    AN569

    Abstract: MTD2N50 MTD2N50E SMD310
    Contextual Info: MOTOROLA Order this document by MTD2N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD2N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET


    Original     		MTD2N50E/D MTD2N50E MTD2N50E/D* AN569 MTD2N50 MTD2N50E SMD310 PDF

    transistor te 2305

    Abstract: SOT223 Package
    Contextual Info: MOTOROLA Order this document by MTB40N1OE/D SEMICONDUCTOR TECHNICAL DATA Advance Data Sheet MTB40N10E TMOS E-FET Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 40 AMPERES 100 VOLTS RDS on = 0-04 OHM This advanced TMOS E-FET is designed to withstand high


    OCR Scan     		MTB40N1OE/D transistor te 2305 SOT223 Package PDF

    a1270* transistor

    Abstract: 1689c hp plotter
    Contextual Info: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2


    Original     		5091-6489E 5968-1410E a1270* transistor 1689c hp plotter PDF

    pa1520

    Abstract: PA1520BH IEI-1213 MEI-1202 MF-1134
    Contextual Info: DATA SHEET Compound Field Effect Power Transistor µPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The µPA1520B is N-channel Power MOS FET Array that PACKAGE DIMENSIONS built in 4 circuits designed for solenoid, motor and lamp in millimeters


    Original     		PA1520B PA1520B PA1520BH pa1520 PA1520BH IEI-1213 MEI-1202 MF-1134 PDF

    PA1572

    Abstract: C10535E C10943X MEI-1202 PT2320 PA1572BH
    Contextual Info: DATA SHEET Compound Field Effect Power Transistor µPA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The µPA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and


    Original     		PA1572B PA1572B PA1572BH 10Pin PA1572 C10535E C10943X MEI-1202 PT2320 PA1572BH PDF

    PHB38N02LT

    Abstract: PHD38N02LT
    Contextual Info: PHD38N02LT N-channel TrenchMOS logic level FET Rev. 02 — 2 February 2007 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features


    Original     		PHD38N02LT mbb076 OT428 PHD38N02LT PHB38N02LT PDF

    NE334501

    Abstract: transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor NE334S01 low noise FET NEC U
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.


    OCR Scan     		NE334S01 NE334S01 NE334501 transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor low noise FET NEC U PDF

    MOSFET SC-59 power

    Abstract: AN569 MTD6P10E SMD310
    Contextual Info: MOTOROLA Order this document by MTD6P10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD6P10E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS on = 0.66 OHM


    Original     		MTD6P10E/D MTD6P10E MTD6P10E/D* MOSFET SC-59 power AN569 MTD6P10E SMD310 PDF

    AN569

    Abstract: MTD6N20E SMD310
    Contextual Info: MOTOROLA Order this document by MTD6N20E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD6N20E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS on = 0.7 OHM


    Original     		MTD6N20E/D MTD6N20E MTD6N20E/D* AN569 MTD6N20E SMD310 PDF