FET TRANSISTOR Search Results

Pch MOS FET

Abstract: US6M2 TUMT6
Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOS FET US6M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (2) (1) (3) 1pin mark 0.2 1.7 zFeatures 1) Nch MOS FET and Pch MOS FET are put in TUMT6 package.

QS6M4

Abstract: TSMT6 Pch MOS FET m04 fet
Contextual Info: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.

IL062

Abstract: IL062N TL062C IL062D il0621
Contextual Info: TECHNICAL DATA IL062 Low Power J-FET DUAL OPERATIONAL AMPLIFIERS The IL062 is high speed J-FET input dual operational amplifier. This J-FET input operational amplifier incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.

il0621

Abstract: IL062 TL062C IL062N IL062D
Contextual Info: TECHNICAL DATA IL062 Low Power J-FET DUAL OPERATIONAL AMPLIFIERS The IL062 is high speed J-FET input dual operational amplifier. This J-FET input operational amplifier incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.

Contextual Info: SOLID STATE DEVICES INC 3SE D •! Ö3bb011 0002317 0 * S S I N-FET 28.0 100 0.077 SFF140V N-FET 18.0 200 0.180 SFF240V N-FET 10.0 400 0.550 SFF340V N-FET 8.0 500 0.850 SFF440V N-FET 30.0 100 0.055 SFF150V N-FET 30.0 200 0.085 SFF250V N-FET 15.0 400 0.300

TLO84

Abstract: TLO84C tl0b4c tl 0841 TL084MGC TL084M TL0848 TL064AC TL064BC TL064IDP
Contextual Info: THOMSON SEMICONDUCTORS TL084 TL084A TL084B J-FET IN PU T Q U A D OP-AM Ps J-FET INPUT Q U A D OP-AM Ps The TL0B4, TL084A and TL084B are high speed J-FET input quad operational amplifiers incorporating well matched, high voltage J-FET and bipolar transistors

2sc5922

Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
Contextual Info: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability

093.216

Abstract: 2sk2974 093.941 transistor 2sk2974
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2974 SILICON MOS FET TYPE DESCRIPTION OUTLINE DRAWING Dimensions in mm 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. INDEX MARK BOTTOM (TOP) FEATURES • High power gain:Gpe>8.4dB

JAPAN transistor

Abstract: 30v N channel MOS FET 2SK3019 ON503
Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating

Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating

Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating

2SK2973

Abstract: 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES * High power gain:Gpe>13dB « VDD=9.6V,f=450MHz,Pin= 17dBm * High efficiency:55% typ.

HA17084

Abstract: ha17080 equivalent HA17082 DP-14 HA17080 HA17080A HA17082A HA17083 HA17083A HA17084A
Contextual Info: HA17080 Series J-FET Input Operational Amplifiers Description Since J-FET input operational amplifiers are formed from a pair of J-FET transistors, they provide superlative characteristics, including a high input impedance and a low input bias current. Thus they can be

ENN8366

Abstract: CPH5903 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET
Contextual Info: CPH5903 Ordering number : ENN8366 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon FET CPH5903 High-Frequency Amplifier. AM Amplifier Applications Features • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

pin diagram of ic tl082

Abstract: l0828 tl0828 L082 TL082 OF IC TL082 tl082 equivalent ic TL082AC TL082BC TL082C
Contextual Info: UTC TL082 LINEAR INTEGRATED CIRCUIT GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER SOP-8 DESCRIPTION The UTC TL082 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.

Contextual Info: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 Features 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.

TL072 PIN DIAGRAM

Abstract: tl072 equivalent tl072 cl 50W linear power amplifier tl072 TL072AC TL072BC TL072C Contek Microelectronics S-100W
Contextual Info: TL072 LINEAR INTEGRATED CIRCUIT LOW NOISE DUAL J-FET OPERATIONAL AMPLIFIER DESCRIPTION The ContekTL072 is a high speed J- FET input dual operational amplifier. It incorporates well matched , high voltage J- FET and bipolar transistors in a monolithic integrated circuit. The device features high

TL062

Abstract: TL062AC TL062BC tl062 equivalent
Contextual Info: UTC TL062 LINEAR INTEGRATED CIRCUIT LOW POWER DUAL J-FET OPERATIONAL AMPLIFIER DESCRIPTION The TL062 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit. The device features high

QS5U27

Abstract: IR 240 FET
Contextual Info: QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U27 combines Pch MOS FET with a

tlo71

Abstract: TL071IC TL071M TL071 TL071C TL071 PIN DIAGRAM transistor t18 FET TL071A TL071AC TL071B
Contextual Info: THOMSON SEMICONDUCTORS TL071 TL071A TL071B LOW NOISE J-FET IN PUT SINGLE OP-AM Ps The TL071, TL071A and TL071B are high speed J-FET input operational ampli­ fiers incorporating well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.

QS6U24

Contextual Info: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.

Contextual Info: QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U23 combines Pch MOS FET with a

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

L082

Abstract: pin diagram of ic tl082 IC TL082 l0828 TL082 tl082 equivalent ic OF IC TL082 QW-R105-019
Contextual Info: UTC TL082 LINEAR INTEGRATED CIRCUIT GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER SOP-8 DESCRIPTION The UTC TL082 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.