FET SMALL SIGNAL Search Results
FET SMALL SIGNAL Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MD82C288-10/R |
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82C288 - Control/Command Signal Generator |
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| ADSP-2101BG-100 |
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ADSP-2101 - 16-Bit Fixed-Point DSP Microprocessor (-40C to + 85C) |
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| ADSP-2105BPZ-80 |
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ADSP-2105 - 16-Bit Fixed-Point DSP Microprocessor (-40C to + 85C) |
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| ADSP-2101BPZ-100 |
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ADSP-2101 - 16-Bit Fixed-Point DSP Microprocessor (-40C to + 85C) |
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| ADSP-2101BP-100 |
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ADSP-2101 - 16-Bit Fixed-Point DSP Microprocessor, (-40C to 85C) |
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FET SMALL SIGNAL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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FET2Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview Package FG654301 is N-P channel dual type small signal MOS FET employed small |
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2002/95/EC) FG654301 FG654301 FET2 | |
FET2Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview Package FG654301 is N-P channel dual type small signal MOS FET employed small |
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2002/95/EC) FG654301 FG654301 FET2 | |
s11 hall magnetic sensorContextual Info: WHITE PAPER: WP016 eGaN FET Small Signal RF Performance eGaN® FET Small Signal RF Performance EFFICIENT POWER CONVERSION Michael de Rooij, Ph.D., Executive Director of Applications Engineering and Johan Strydom, Ph.D., V.P., Applications, Efficient Power Conversion Corporation |
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WP016 EPC2012 EPC2012 s11 hall magnetic sensor | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FK350301 Silicon N-channel MOS FET For switching circuits • Overview Package FK350301 is N-channel small signal MOS FET employed small size surface mounting package. Code SMini3-F2-B |
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2002/95/EC) FK350301 FK350301 FK3503010L | |
FK330601Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FK330601 Silicon N-channel MOS FET For switching circuits • Overview Package FK330601 is N-channel small signal MOS FET employed small size surface mounting package. Code SSSMini3-F2-B |
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2002/95/EC) FK330601 FK330601 | |
SSSMini3-F2-B
Abstract: FK330301
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2002/95/EC) FK330301 FK330301 SSSMini3-F2-B | |
FJ350301Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FJ350301 Silicon P-channel MOS FET For switching circuits • Overview Package FJ350301 is P-channel small signal MOS FET employed small size surface mounting package. Code SMini3-F2-B |
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2002/95/EC) FJ350301 FJ350301 FJ3503010L | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FK8V0303 Silicon N-channel MOS FET For DC-DC Converter circuits • Overview Package FK8V0303 is N-channel single type small signal MOS FET adopted small size surface mounting package. |
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2002/95/EC) FK8V0303 FK8V0303 FK8V03030L | |
FK350601
Abstract: SMini3-F2-B
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2002/95/EC) FK350601 FK350601 SMini3-F2-B | |
fet book
Abstract: FC6946010R
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2002/95/EC) FC694601 FC694601 667-FC6946010R FC6946010R fet book FC6946010R | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FC591301 Silicon N-channel MOS FET For switching circuits • Overview Package FC591301 is N-channel dual type small signal MOS FET employed small size surface mounting package. Code SSMini5-F4-B |
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2002/95/EC) FC591301 FC591301 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FC694301 Silicon N-channel MOS FET For switching circuits • Overview Package FC694301 is dual N-channel small signal MOS FET employed small size surface mounting package. Code SSMini6-F3-B |
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2002/95/EC) FC694301 FC694301 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FC591601 Silicon N-channel MOS FET For switching circuits • Overview Package FC591601 is N-channel dual type small signal MOS FET employed small size surface mounting package. Code SSMini5-F4-B |
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2002/95/EC) FC591601 FC591601 FC5916010R | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FC591601 Silicon N-channel MOS FET For switching circuits • Overview Package FC591601 is N-channel dual type small signal MOS FET employed small size surface mounting package. Code SSMini5-F4-B |
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2002/95/EC) FC591601 FC591601 | |
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FC8J3304Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FC8J3304 Silicon N-channel MOS FET For DC-DC converter circuits • Overview Package FC8J3304 is N-channel dual type small signal MOS FET employed small size surface mounting package. Code |
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2002/95/EC) FC8J3304 FC8J3304 FC8J33040L | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01317 GaAs FET HYBRID IC DESCRIPTION FA01317 is RF Hybrid IC designed for 1.5GHz band small size hand held radio. FEATURES • • • • • High efficiency High power High gain Small size Frequency range 35 % 31 (dBm) |
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FA01317 FA01317 M5M27C102P, RV-15 16-BIT) | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FM6K6201 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview Package FM6K6201 is N-channel single type small signal MOS FET with SBD |
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2002/95/EC) FM6K6201 FM6K6201 FM6K62010L | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5201 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview Package FL6L5201 is P-channel single type small signal MOS FET with SBD |
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2002/95/EC) FL6L5201 FL6L5201 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5207 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview Package FL6L5207 is P-channel single type small signal MOS FET with SBD |
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2002/95/EC) FL6L5207 FL6L5207 FL6L52070L | |
fet marking y2Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5206 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview Package FL6L5206 is P-channel single type small signal MOS FET with SBD |
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2002/95/EC) FL6L5206 FL6L5206 FL6L52060L fet marking y2 | |
MXR9745RT1
Abstract: FET SOT-89 N-Channel MXR9745T1 small signal transistor MOTOROLA motorola power fet rf High Dynamic Range FET sot-89
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MXR9745T1/D MXR9745T1 MXR9745RT1 MXR9745RT1 MXR9745T1 FET SOT-89 N-Channel small signal transistor MOTOROLA motorola power fet rf High Dynamic Range FET sot-89 | |
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Contextual Info: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli |
OCR Scan |
MGF1923 13dBm 12GHz | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FL525205 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview Code Mini5-G3-B FL525205 is the P-channel single type small signal MOS FET with SBD. |
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2002/95/EC) FL525205 FL525205 FL5252050L | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01209 GaAs FET HYBRID 1C DESCRIPTION F A 01 2 0 9 is RF Hybrid IC designed for 9 0 0 M H z band small size hand held radio. FEATURES • High efficiency • High power 3 5 % 31 (dBm) • High gain 2 4 (dB) • Small size |
OCR Scan |
FA01209 27C102P, RV-15 | |