FET PACKING MARKING MT Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM76720 is the composite MOS FET (N-channel MOS FET and schottky

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky

MTM76720

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits M Di ain sc te on na tin nc ue e/ d • Package

marking JE FET

Abstract: MTM86727
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits M Di ain sc te on na tin nc ue e/ d • Package

Contextual Info: Doc No. TT4-EA-14584 Revision. 2 Product Standards MOS FET MTM131230BBF MTM131230BBF Silicon P-channel MOSFET Unit : mm 2.9 For switching 0.4 0.16 3 • Features 1.5 2.8  Low drain-source ON resistance : RDS on typ. = 40 m  ( VGS = -4.0 V )  Halogen-free / RoHS compliant

MTM15624

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM15624 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits • Package  Overview  Code Mini5-G1  Pin Name 1: Cathode 2: Drain

Contextual Info: Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF MTMC8E2A0LBF Gate Resistor installed Dual N-Channel MOS Typ Unit: mm 2.9 For lithium-ion secondary battery protection circuit 0.3 8 7 6 5 1 2 3 4 0.16 2.4 2.8 • Features  Low drain-source On-state Resistance

Mtm76320

Abstract: MTM7632
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) MTM76320 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Package  Overview MTM76320 is the composite MOS FET (N-channel and P-channel MOS

mtm76325

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . MTM76325 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview  Package MTM76325 is the composite MOS FET (N-channel and P-channel MOS

MTM86627

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package  Overview MTM86627 is the composite MOS FET (P-channel MOS FET and Schttoky

MTM76320

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) MTM76320 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Package  Overview MTM76320 is the composite MOS FET (N-channel and P-channel MOS

Contextual Info: Doc No. TT4-EA-13636 Revision. 4 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOS FET Unit : mm For switching 2.9 0.4 • Features 0.16  Low Drain-source On-state Resistance : RDS on typ = 92 m  (VGS = -4.0 V)  Low drive voltage: 1.8 V drive

Contextual Info: Doc No. TT4-EA-13115 Revision. 2 Product Standards MOS FET MTM232270LBF MTM232270LBF Silicon N-channel MOS FET Unit : mm For switching MTM13227 in SMini3 type package 2.0 0.3 • Features 0.15 3 1.25 2.1  Low drain-source On-state resistance : RDS on typ = 85 m  (VGS = 4.0 V)

Contextual Info: Doc No. TT4-EA-13636 Revision. 3 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOS FET Unit : mm For switching 2.9 0.4 • Features 0.16  Low Drain-source On-state Resistance : RDS on typ = 92 m  (VGS = -4.0 V)  Low drive voltage: 1.8 V drive

MTM7632

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) MTM76320 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview  Package MTM76320 is the composite MOS FET (N-channel and P-channel MOS

MTM68410

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) MTM68410 Silicon P-channel MOS FET For load switch circuits For switching circuits • Overview  Package MTM68410 is the low ON resistance dual P-channel MOS FET designed for

Contextual Info: Doc No. TT4-EA-12099 Revision. 2 Product Standards MOS FET MTM684100LBF MTM684100LBF Dual P-channel MOSFET Unit: mm 2.9 For switching 0.3 8 7 6 5 1 2 3 4 2.4 2.8 • Features  Low drain-source On-state Resistance RDS on typ. = 32 m (VGS =-4.0 V)  Low drive voltage:1.8V drive

MTM761100L

Contextual Info: Doc No. TT4-EA-10443 Revision. 2 Product Standards MOS FET MTM761100LBF MTM761100LBF Silicon P-channel MOSFET Unit : mm For Switching 2.0 0.2 0.13 6 5 4 1 2 3 • Features 1.7 2.1  Low Drain-source On-state Resistance : RDS on typ. = 30 m (VGS = -4.0 V)

Contextual Info: Doc No. TT4-EA-10241 Revision. 2 Product Standards MOS FET MTM982400BBF MTM982400BBF Silicon N-channel MOSFET Unit: mm 5.0 For switching 0.4 8 7 6 5 1 2 3 4 5.0 6.0 • Features  Low drain-source On-state Resistance RDS on typ = 29 m (VGS = 5.0 V)  Halogen-free / RoHS compliant

Contextual Info: Doc No. TT4-EA-13593 Revision. 2 Product Standards MOS FET MTM684110LBF MTM684110LBF Dual P-channel MOSFET Unit: mm 2.9 For switching 0.3 8 7 6 5 1 2 3 4 2.4 2.8 • Features  Low drain-source On-state Resistance RDS on typ. = 23 m (VGS =-5.0 V)  Low drive voltage:1.8V drive

MTM131270BBF

Contextual Info: Doc No. TT4-EA-13636 Revision. 2 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOSFET Unit: mm For Switching 2.9 0.4 0.16 3  Low Drain-source On-state Resistance : RDS on typ = 92 m  (VGS = -4 V)  Low Drive Voltage : 1.8 V Drive

mtm861270

Abstract: MTM86127 mtm13127
Contextual Info: Doc No. TT4-EA-10304 Revision. 2 Product Standards MOS FET MTM861270LBF MTM861270LBF Silicon P-channel MOSFET Unit : mm For Switching 1.6 0.2 MTM13127 in WSSMini6 type package 0.13 6 5 4 1 2 3 • Features  Marking Symbol : MK 1.4 1.6  Low Drain-source On-state Resistance : RDS on typ = 80 m  (VGS = -4 V)

MTM68411

Abstract: 6 PIN case mos fet p-channel
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) MTM68411 Silicon P-channel MOS FET For load switch circuits For switching circuits • Overview  Package MTM68411 is the low ON resistance dual P-channel MOS FET designed for