FET MIXER Search Results

Contextual Info: HMJ2 High Dynamic Range FET Mixer Product Features Product Description • +37 dBm IIP3 Functional Diagram The HMJ2 is a high dynamic range GaAs FET mixer. This active FET mixer realizes a typical third order intercept point of +37 dBm at an LO drive level of +17

JESD22-A114

Abstract: gaas fet marking A
Contextual Info: HMJ8 High Dynamic Range FET Mixer Product Features Product Description x +37 dBm IIP3 Functional Diagram The HMJ8 is a high dynamic range GaAs FET mixer. This active FET mixer realizes a typical third order intercept point of +37 dBm at an LO drive level of +18

Contextual Info: SGM2014AN GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.

Contextual Info: SGM2014AM GaAs N-channel Dual Gate MES FET Preliminary Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF

SGM2014AM

Contextual Info: SGM2014AM GaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.

SGM2014AN

Contextual Info: SGM2014AN GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.

3SK165A

Abstract: 3SK165A-0 3SK165A-1 nf 820
Contextual Info: 3SK165A GaAs N-channel Dual Gate MES FET Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation

"GaAs N-channel Dual Gate"

Abstract: SGM2014AN Sony Semiconductor M-281
Contextual Info: SGM2014AN GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications

3SK165A

Abstract: 3SK165A-0 3SK165A-1
Contextual Info: 3SK165A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications

Contextual Info: HMC216MS8 MICROWAVE CORPORATION GaAs MMIC SMT DOUBLE-BALANCED FET MIXER 1.3 - 2.5 GHz FEBRUARY 2000 Midband Performance General Description IP3 INPUT : +25 dBm @ +11 dBm LO The HMC216MS8 is an ultra miniature doublebalanced FET mixer in an 8 lead plastic surface

SGM2016AN

Abstract: dual-gate
Contextual Info: SGM2016AN GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications

Contextual Info: SONY SGM2014AN GaAs N-channel Dual Gate MES FET Preliminary Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF

3SK165A

Abstract: 3SK165A-1 3SK165A-0
Contextual Info: 3SK165A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation

HMJ7

Abstract: CATV HEADEND JESD22-A114
Contextual Info: HMJ7 The Communications Edge TM Product Information High Dynamic Range FET Mixer Product Features Product Description x +34 dBm IIP3 Functional Diagram The HMJ7 is a high dynamic range GaAs FET mixer. This active broadband mixer realizes a typical third order

SGM2016AN

Abstract: dual-gate SGM2016 N-Channel, Dual-Gate FET
Contextual Info: SGM2016AN GaAs N-channel Dual-Gate MES FET Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.

JESD22-A114

Abstract: FET GAAS marking a HMJ7-1
Contextual Info: HMJ7-1 The Communications Edge TM Product Information High Dynamic Range FET Mixer Product Features Product Description x Greater than +34 dBm IIP3 The HMJ7-1 is a high dynamic range GaAs FET mixer. This active broadband mixer realizes a typical third order

Contextual Info: SO N Y SGM2016AN GaAs N-channel Dual-Gate MES FET Prelim inary Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,

Sony 104A

Contextual Info: SGM2014M] SONY. GaAs N-channel Dual Gate MES FET Description Package Outline The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable lor a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.

SGM2016AM

Abstract: SGM2016AP dual-gate
Contextual Info: SGM2016AM/AP GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications

Contextual Info: SONY S G M 2014A M GaAs N-channel Dual Gate MES FET Preliminary D escription The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF

nf 948

Abstract: 4600 fet U/25/20/TN26/15/850/NF 948 NF 841 3SK148 CD 7812 dual-gate
Contextual Info: 3SK148 SONY GaAs N-channel Dual-Gate MES FET Description: The 3SK148 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise and high gain characteristics are accomplished by optimum mask pattern designing. Easier high frequency circuits

317 jrc VOLTAGE REGULATOR

Abstract: 317 jrc jrc 317 radar front end radar amplifier s-band circuit diagram of hp monitor radar block diagram amplifier lna low noise amplifier s-band S-band limiter diagram radar circuit
Contextual Info: NJT1307A S-Band Radar Front End NJT1307A is a S-Band Radar Front End which includes 4 port circulator, high power limiter, variable attenuator, GaAs FET low noise amplifier, image rejection mixer, local VCO with isolator and FET operation monitor circuit in a single package.

HMC216MS8

Contextual Info: HMC216MS8 MICROWAVE CORPORATION GaAs MMIC SMT DOUBLE-BALANCED FET MIXER 1.3 - 2.5 GHz FEBRUARY 2001 Features General Description IP3 INPUT : +25 dBm @ +11 dBm LO The HMC216MS8 is an ultra miniature doublebalanced FET mixer in an 8 lead plastic surface mount package (MSOP). This MMIC mixer is

M3X marking

Contextual Info: IAM-92516 High Linearity GaAs FET Mixer Data Sheet Description Features Avago Technologies’s IAM-92516 is a high linearity GaAs FET Mixer using 0.5 m enhancement mode pHEMT technology. This device houses in Pb-free and Halogen free 16 pins LPCC 3x3[2] plastic package. The IAM-92516