BF991
Abstract: fet MARKING g2 Marking G2 dual-gate SOT-103 sot103 transistor SOT103 mosfet
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF991 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF991 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF989
Abstract: MOSFET 4466 BP317 SCA52 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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bf989ot143sca52117061/00/02/pp8+3mosfet 4466bp317dual-gate
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BF990A
Abstract: PHILIPS MOSFET MARKING 4814 mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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bf990aot143sca52117061/00/02/pp8+3philips mosfet marking4814 mosfetdual-gate
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BF997
Abstract: Philips MKP dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF997
Abstract: Dual-Gate Mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF990A
Abstract: mosfet handbook Dual-Gate Mosfet philips mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF989
Abstract: Dual-Gate Mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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transistor SOT103
Abstract: BF991 Dual-Gate Mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF991 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF991 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF994S marking code
Abstract: FET MARKING CODE Marking G2 BF994S sot143 marking code G2 Dual-Gate Mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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marking code cig
Abstract: fet dual gate sot143 Dual-Gate Mosfet BF996S dual-gate p 1S marking SOT143
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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MSB390
Contextual Info: 2381 66. 93. Vishay BCcomponents PTC Thermistors, Time Delay For Lighting FEATURES C fluorescent lamp L rectified mains 310 V d.c. for 230 V a.c. mains cathode cathode C • Reliable starting, time and time again FET switch 36 kHz lamp supply FET switch
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LF3531
Abstract: Thomson lf353 k 105 jfet LF353 APPLICATION 353B LF153AGC LF153BGC LF153GC LF353 LF353BN
Contextual Info: r ¿5 7 LF153/A/B LF253/A/B LF353/A/B SGS-THOMSON lU Û T IR M Q O S J-FET INPUT DUAL OP-AMPs LOW POWER CONSUMPTION WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J-FET INPUT
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lf153/a/blf253/a/blf353/a/blf353+11lcc2027maxlf3531thomson lf353k 105 jfetlf353 application353blf153agclf153bgclf153gclf353bn
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PMF370XN
Abstract: SOT323 FET N M 087
Contextual Info: PMF370XN N-channel µTrenchMOS extremely low level FET Rev. 01 — 11 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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PMF780SN
Abstract: 12764 VDS60V
Contextual Info: PMF780SN N-channel µTrenchMOS standard level FET Rev. 01 — 10 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package
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Contextual Info: PMF280UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 27 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package
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JEDEC Drawing MO-006
Contextual Info: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK
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Contextual Info: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK
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three stage Instrumentation Amplifier
Abstract: INA110AG Power resistor 0,25R transformer pulse 6 pin 500v AD524 AD624 INA110 ad624 application ad524 application
Contextual Info: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK
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AD524
Abstract: AD624 INA110 INA110AG JEDEC Drawing MO-006 dsp relay A0301
Contextual Info: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK
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fluorescent lamp starter
Abstract: electronic ballast for fluorescent lighting PTCLL05 electronic ballast PTC Thermistor Application of electronics circuits to lighting conventional fluorescent lamp starter igniTION CIRCUIT ptc application note ptc fluorescent ballast
Contextual Info: 2381 66. 93. / PTCLL.P.E Vishay BCcomponents PTC Thermistors, Time Delay For Lighting FEATURES C fluorescent lamp • Reliable starting, time and time again FET switch L rectified mains 310 V d.c. for 230 V a.c. mains 36 kHz lamp supply cathode cathode
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mbc4252002/95/ec2002/96/ec08-apr-05+10fluorescent lamp starterelectronic ballast for fluorescent lightingptcll05electronic ballastptc thermistorapplication of electronics circuits to lightingconventional fluorescent lamp starterignition circuitptc application noteptc fluorescent ballast
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PMF400UN
Contextual Info: PMF400UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 11 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package
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Contextual Info: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK
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Contextual Info: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK
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