Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FET MARKING FL Search Results

    FET MARKING FL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG80C186-10/BZA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy
    54121/BCA
    Rochester Electronics LLC 54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) PDF Buy
    54AC20/SDA-R
    Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) PDF Buy

    FET MARKING FL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fl6l5201

    Contextual Info: FL6L5201 Tentative Total pages page FL6L5201 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For switching circuits Marking Symbol : Y1 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C Parameter


    Original
    FL6L5201 fl6l5201 PDF

    FET MARKING CODE

    Abstract: FL6L5201
    Contextual Info: FL6L5201 Tentative Total pages page FL6L5201 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For switching circuits Marking Symbol : Y1 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C Parameter


    Original
    FL6L5201 FET MARKING CODE FL6L5201 PDF

    FL6L5203

    Abstract: FET MARKING CODE
    Contextual Info: FL6L5203 Tentative Total pages page FL6L5203 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For high speed switching circuits Marking Symbol : Y3 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C


    Original
    FL6L5203 FL6L5203 FET MARKING CODE PDF

    Contextual Info: FL6L5203 Tentative Total pages page FL6L5203 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For high speed switching circuits Marking Symbol : Y3 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C


    Original
    FL6L5203 PDF

    Contextual Info: Doc No. TT4-EA-12746 Revision. 2 Product Standards MOS FET FL6L52010L FL6L52010L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol : Y1 1.4


    Original
    TT4-EA-12746 FL6L52010L UL-94 PDF

    Contextual Info: Doc No. TT4-EA-13066 Revision. 2 Product Standards MOS FET FL6L52060L FL6L52060L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 „ Features „ Marking Symbol : Y2 1.4 1.6


    Original
    TT4-EA-13066 FL6L52060L UL-94 PDF

    Contextual Info: Doc No. TT4-EA-13148 Revision. 2 Product Standards MOS FET FL6L52030L FL6L52030L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol Y3 1.4 1.6


    Original
    TT4-EA-13148 FL6L52030L UL-94 PDF

    Contextual Info: Doc No. TT4-EA-13067 Revision. 2 Product Standards MOS FET FL6L52070L FL6L52070L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol Y4 1.4 1.6


    Original
    TT4-EA-13067 FL6L52070L UL-94 PDF

    DSKTJ05

    Abstract: transistor code book FET MARKING CODE
    Contextual Info: DSKTJ05 Tentative Total pages page DSKTJ05 Silicon N-channel junction FET For AF impedance converter Marking Symbol : 9S, 9T Package Code : TSSSMini3-F2-B Absolute Maximum Ratings Ta = 25 °C Parameter Drain-source voltage Gate open Drain-gate voltage(Source open)


    Original
    DSKTJ05 DSKTJ05 transistor code book FET MARKING CODE PDF

    transistor code book

    Abstract: DSKTJ08
    Contextual Info: DSKTJ08 Tentative Total pages page DSKTJ08 Silicon N-channel junction FET For AF impedance converter Marking Symbol : CT, CU Package Code : TSSSMini3-F2-B Absolute Maximum Ratings Ta = 25 °C Parameter Drain-source voltage Gate open Drain-gate voltage(Source open)


    Original
    DSKTJ08 transistor code book DSKTJ08 PDF

    bf544

    Abstract: siemens fet to92 700M
    Contextual Info: SIEMENS BF 544 Silicon N Channel MOS FET Triode Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / dss= 4 mA, g ts = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan
    Q62702-F1231 eht07043 eht07044 EHM07002 fl23SbDS 0Qbb777 bf544 siemens fet to92 700M PDF

    CFY10

    Abstract: siemens gaas fet CFY 10 Ga FET marking k CFY 18 cfy 14 siemens
    Contextual Info: SIEMENS CFY 10 GaAs FET • Low noise • High gain • Suitable up to 14 G Hz • Ion-implanted planar structure • All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    OCR Scan
    Q62703-F11 fl23SbOS 00b74cà CFY10 fl235fci05 CFY10 siemens gaas fet CFY 10 Ga FET marking k CFY 18 cfy 14 siemens PDF

    sst211 sot-143

    Abstract: SST211 SST215 SST213 TZ marking sot143 fet
    Contextual Info: TE L E D Y NE BÖE » COMPONENTS *7Tfa [s lt2 \5 Z m flW b ü S Q0üb4Sb 2 SST211, SST213 SST215 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS FET SWITCHES ORDERING INFORMATION SOT-143 Pkfl. Package 24) Topside Device Marking Description F’reparation for shipment


    OCR Scan
    SST211, SST213 SST215 OT-143 SST21Ã SST213 10Vt70ft SST211 SST215 sst211 sot-143 TZ marking sot143 fet PDF

    Contextual Info: S IE M E N S Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • /dss = 4 mA, g is = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan
    Q62702-F1372 OT-23 EHM07Ã 1B1L75 PDF

    FET GAAS marking a

    Contextual Info: PRELIMINARY DATA SHEET NEC's 4-PIN ULTRA SMALL FLAT-LEAD PS7801C-1A SUPER LOW OUTPUT CAPACITANCE 1-ch OPTICAL COUPLED MOS FET FEATURES • ULTRA SMALL FLAT-LEAD PACKAGE: 4.2 L x 2.5 (W) × 1.85 (H) mm • SUPER LOW OUTPUT CAPACITANCE: Cout = 0.5 pF TYP.


    Original
    PS7801C-1A PS7801C-1A-F3, PS7801C-1A FET GAAS marking a PDF

    Low Capacitance MOS FET

    Abstract: PS7801E-1A diode marking BDE on semiconductor 1E marking "FET" f3a FET
    Contextual Info: Solid State Relay OCMOS FET PS7801E-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C x R, 1-ch Optical Coupled MOS FET DESCRIPTION The PS7801E-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side input side and MOS FETs on the output side.


    Original
    PS7801E-1A PS7801E-1A PS72xx Low Capacitance MOS FET diode marking BDE on semiconductor 1E marking "FET" f3a FET PDF

    TS5N214

    Contextual Info: TS5N214 2-BIT 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS206 – AUGUST 2005 FEATURES • • • • • • • • DBQ OR PW PACKAGE TOP VIEW Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range


    Original
    TS5N214 SCDS206 000-V A114-B, TS5N214 PDF

    Contextual Info: TS5N118 1-OF-8 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS205 – AUGUST 2005 FEATURES APPLICATIONS • • • • • • • • • • • • • Low and Flat ON-State Resistance ron Characteristics Over Operating Range


    Original
    TS5N118 SCDS205 000-V A114-B, PDF

    t08 fet

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FL6L52070L FL6L52070L Silicon P-channel MOSFET(FET) Unit: mm Silicon epitaxial planar type(SBD) For Switching • Features  Low Drain-source On-state Resistance:RDS(on) typ = 300 mΩ (VGS = -4.0 V)


    Original
    2002/95/EC) FL6L52070L UL-94 FL6L52070L t08 fet PDF

    HV9960

    Contextual Info: Supertex inc. HV9860 Single Channel Boost LED Driver with LED Wiring Fault Detection Features General Description ►► Switch mode controller for boost and flyback converters ►► Discontinuous conduction mode of operation ►► High output current accuracy


    Original
    125OC) 100kHz HV9860 HV9860 DSFP-HV9860 B060713 HV9960 PDF

    Contextual Info: TS5N118 1-OF-8 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS205 – AUGUST 2005 FEATURES APPLICATIONS • • • • • • • • • • • • • Low and Flat ON-State Resistance ron Characteristics Over Operating Range


    Original
    TS5N118 SCDS205 000-V A114-B, PDF

    HV9960

    Abstract: HV986 flyback led driver with pwm dimming
    Contextual Info: Supertex inc. HV9860 Single Channel Boost LED Driver with LED Wiring Fault Detection Features ►► Switch mode controller for boost and flyback converters ►► Discontinuous conduction mode of operation ►► High output current accuracy ►► Internal ±2% voltage reference 0OC < TA < 125OC


    Original
    125OC) 100kHz HV9860 HV9860 DSFP-HV9860 A100511 HV9960 HV986 flyback led driver with pwm dimming PDF

    TS5N412

    Contextual Info: TS5N412 4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS207 – AUGUST 2005 FEATURES APPLICATIONS • • • • • • • • • • • • • Low and Flat ON-State Resistance ron Characteristics Over Operating Range


    Original
    TS5N412 SCDS207 000-V A114-B, TS5N412 PDF

    NO2-B1

    Contextual Info: Solid State Relay OCMOS FET PS7802B-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C x R 6.3 pF • Ω 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7802B-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side


    Original
    PS7802B-1A PS7802B-1A PS72xx NO2-B1 PDF