FET LNA Search Results

Contextual Info: DISCRETE SEMICONDUCTORS PHN70308 7 N-channel 30/80 mQ FET array Objective specification Philips Sem iconductors 1999 Apr 06 PHILIPS Philips Semiconductors Objective specification 7 N-channel 30/80 mQ FET array PHN70308 FEATURES PINNING SOT341-1 SSOP28 • 30 m£2 pass/isolation FET

2N3643

Abstract: opamp 747 AN80901 3.3k variable resistor AN8090 resistor 3.3k FET LNA 747 opamp eastern nec microwave
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN80901 Two Stage GaAs FET LNA Bias Supply INTRODUCTION This regulator is recommended to bias a two stage, grounded source GaAs FET LNA with constant drain currents1. With minor modification, two additonal bias stages could be added to this circuit.

HIGH GAIN FET

Contextual Info: COAXIAL GaAs FET AMPLIFIERS MLA 2500-000 SERIES NARROWBAND GaAs FET AMPLIFIERS 0.5 TO 18.0 GHz FEATURES ♦ Radar & Communications Bands ♦ Low Noise Figures ♦ Wide Dynamic Ranges ♦ Temperature Compensation ♦ Miniature Outlines DESCRIPTION The MLA 2500-000 series of coaxial GaAs FET amplifiers from M/A-COM Ltd are designed for specific narrowband

AS15D

Abstract: sot89 fet GaAs FET sot89 FET SOT89 ANCLC2R45J100AAA
Contextual Info: MICROWAVE PRODUCTS m u ffa ta GaAs FET/Antenna •Small Signal FET XMFS Series Parts Number j XMFS2-M1 Package Main Characteristics Application Plastic F m in= 0.4 dB @ 2G H zi Gas— ^ d B DBS Oscillator LNA (PCS. PDC, PHS F m in= 0.4 dB (@2GHz) G as=15dB

Contextual Info: A Product Line of Diodes Incorporated ZABG6002 LOW POWER 6 STAGE FET LNA AND MIXER BIAS CONTROLLER Summary The ZABG6002 is a programmable low power depletion mode FET bias and mixer controller intended primarily for satellite Low Noise Blocks LNBs . Designed to provide system flexibility the ZABG6002 can be programmed to bias

ZABG6002

Abstract: twin lnb stripline QSOP20 QFN20-4 ccg6
Contextual Info: A Product Line of Diodes Incorporated ZABG6002 LOW POWER 6 STAGE FET LNA AND MIXER BIAS CONTROLLER Summary The ZABG6002 is a programmable low power depletion mode FET bias and mixer controller intended primarily for satellite Low Noise Blocks LNBs . Designed to provide system flexibility the ZABG6002 can be programmed to bias

MOSFET 4466

Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES

gs 069

Abstract: 7698 8627 CFH800
Contextual Info: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Product Description Features The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to 4 GHz such as PCS CDMA and UMTS receivers, base stations LNAs, and WLAN

Contextual Info: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Features • Product Description The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to 4 GHz such as PCS CDMA and UMTS receivers, base stations LNAs, and

marking code jf1 input id

Abstract: depletion mode current limiter twin lnb marking code jf1 ZNBG4003 ZNBG4003JA16TC FET LNA quad lnb DS35007 mixer lnb
Contextual Info: A Product Line of Diodes Incorporated ZNBG4003 4 STAGE FET LNA BIAS CONTROLLER Summary The ZNBG4003 is a four stage depletion mode FET bias controller intended primarily for satellite Low Noise Block’s LNB’s , but its also suitable for other LNA applications such as those in found in PMR’s and microwave links. The ZNBG4003 provides each

Contextual Info: A Product Line of Diodes Incorporated ZNBG4003 4 STAGE FET LNA BIAS CONTROLLER Summary The ZNBG4003 is a four stage depletion mode FET bias controller intended primarily for satellite Low Noise Block’s LNB’s , but its also suitable for other LNA applications such as those in found in PMR’s and microwave links. The ZNBG4003 provides each

ZNBG3118

Abstract: diseqc* LNB POWER monoblock lnb twins lnb ZNBG3118JA16TC capacitor 100nf monoblock twin lnb stages capacitor 10nf monoblock hemt lnb
Contextual Info: A Product Line of Diodes Incorporated ZNBG3118 LNA GaAs FET BIAS CONTROLLER WITH POLARIZATION AND BAND SELECT Summary The ZNBG3118 is a bias and control solution designed for Satellite Low Noise Blocks LNB’s . Providing three bias stages to power control and protect the GaAs or HEMT FET low noise amplifier’s (LNA’s). The ZNBG3118 integrates an accurate voltage

qfn16

Abstract: QFN1633 quad lnb ZABG4002JA16TC zabg4002
Contextual Info: A Product Line of Diodes Incorporated ZABG4002 LOW POWER 4 STAGE FET LNA BIAS CONTROLLER Summary The ZABG4002 is a four stage depletion mode FET bias controller intended primarily for satellite Low Noise Block’s LNB’s , but its also suitable for other LNA applications such as those in found in PMR’s and microwave links. The ZABG4002 provides each

Contextual Info: A Product Line of Diodes Incorporated ZABG4002 LOW POWER 4 STAGE FET LNA BIAS CONTROLLER Summary The ZABG4002 is a four stage depletion mode FET bias controller intended primarily for satellite Low Noise Block’s LNB’s , but its also suitable for other LNA applications such as those in found in PMR’s and microwave links. The ZABG4002 provides each

02958

Abstract: 30186 102260 05624 05444
Contextual Info: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Features • Product Description The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to

84549

Abstract: 02958
Contextual Info: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Features • Product Description The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to

7686

Abstract: k 3918 CFH800
Contextual Info: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Features • Product Description The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to

Contextual Info: CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Features • • Product Description The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications up to

317 jrc VOLTAGE REGULATOR

Abstract: 317 jrc jrc 317 radar front end radar amplifier s-band circuit diagram of hp monitor radar block diagram amplifier lna low noise amplifier s-band S-band limiter diagram radar circuit
Contextual Info: NJT1307A S-Band Radar Front End NJT1307A is a S-Band Radar Front End which includes 4 port circulator, high power limiter, variable attenuator, GaAs FET low noise amplifier, image rejection mixer, local VCO with isolator and FET operation monitor circuit in a single package.

QFN12

Abstract: pHEMT QFN-12 AS183-92LF p-HEMT
Contextual Info: Switches DC–6 GHZ PLASTIC PACKAGED AND CHIP — CONTROL FET AND SPST Part Number Frequency GHz Description Insertion Loss Range (dB) Typ. Isolation Range (dB) Typ. IP3 > 0.5 GHz (dBm) Typ. Package (mm) Control FET 300 kHz–1.0 GHz High Power 0.20–0.30

47146

Abstract: 41146
Contextual Info: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

spf 557

Abstract: SPF-2086TK SPF2086 SPF2086TK SPF 775 SPF-2086 sirenza fet
Contextual Info: SPF-2086TK Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices’ SPF-2086TK is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At

spf 557

Abstract: SPF-2086T SPF2086T sirenza fet
Contextual Info: SPF-2086T Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices’ SPF-2086T is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At

SPF-2086T

Abstract: sirenza fet spf 557
Contextual Info: SPF-2086T Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices’ SPF-2086T is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At