FET FT 20 GHZ Search Results

FE42-0001

Abstract: SVC6310
Contextual Info: GaAs Foundry Services PROCESS HI2 HI2 V2.00 Features • Typical RF Performance 0.5 µm MESFET Technology for High Gain/Low Noise Applications MMICs up to 20 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging

Contextual Info: GaAs Foundry Services PROCESS PE3 PE3 V2.00 Features • Typical RF Performance FC06 6X150 900 um FET 0.5 |im MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging

MS2532

Abstract: 15544 FE43-0001 tv lg 37 datasheet FC06 SVC6310 MESFET MULTIWATT die
Contextual Info: GaAs Foundry Services PROCESS PE3 PE3 V2.00 Features • Typical RF Performance 0.5 µm MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging •

Contextual Info: MwT-0206S-9P2/0206Z-9P2 2.0-6.0 GHz BALANCED AMPLIFIER MODULE MICROWAVE TECHNOLOGY 4268 Solar W ay Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TYPICAL SPECIFICATIONS @ 25°C • 11.0 dB SMALL SIGNAL GAIN • +37 dBm IP3 • 26.0 dBm P-1dB • 4.0 dB NOISE FIGURE

diode BB102

Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

3SK238

Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

HITACHI SMD TRANSISTORS

Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,

AWS01

Abstract: aft-186
Contextual Info: What mL'HÆ HEWLETT PACKARD Avantek Products General Purpose GaAs FET Amplifier Series 6 to 18 GHz Technical Data AFT 186 X XX U S eries F eatu res D escription Pin C onfiguration • L ow C o st The AFT 186 X XX U product series offers the system designer

MGFS52B2122

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS52B2122 ft 8«^ 2.1 - 2.2 GHz BAND 160W GaAs FET DESCRIPTION o u t l in e The MGFS52B2122 is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees

AF002C1-32

Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
Contextual Info: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power:

fet ft 25 GHZ

Abstract: fet ft 30 GHZ
Contextual Info: Preliminary GaAs SPST 1C FET Switch Non-Reflective DC-6 GHz EBAlpha AS006M1-93 Features • Low DC Power Consumption -93 ■ High Isolation, Non-Reflective ■ Broadband DC-6 GHz ■ Excellent Intermodulation Products ■ Small Low Cost “Chip on Board” Package

Contextual Info: GaAs MMIC FET 3 Bit Digital Attenuator 4,8,16 dB Bits DC-t GHz EHAIpha AT001D3—11 Features • Designed for Military Applications ■ 8 Lead Metal Surface Mount Package ■ Low DC Power Consumption ■ Meets MIL-STD-883 Screening Requirements Description

transistor C5080

Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Contextual Info: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295

fet ft 25 GHZ

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator 2,4,8,16 dB Bits DC-1 GHz AT001D4-31 Features • Designed for Military Applications ■ Low DC Power Consumption ■ 14 Lead Metal Surface Mount Package ■ Meets M IL -S T D -883 Screening Requirements 2 dB J1 Description

fet amplifier schematic

Abstract: high end amplifier schematics TL74 of 3842 c cor hybrid amplifier modules MITSUBISHI Microwave TL71 high power fet amplifier schematic TL78 mitsubishi gaAs 1998
Contextual Info: Design and Performance of a 1.6-2.2 GHz Low-Noise, High Gain Dual Amplifier in GaAs E-pHEMT White Paper Abstract — The design and realization of a dual lownoise amplifier LNA module in the 2 GHz band suitable for balanced receiver front-end application

Prospects for a BiCFET III-V HBT Process

Abstract: kopin
Contextual Info: Prospects for a BiCFET III-V HBT Process Peter J Zampardi, Mike Sun, Cristian Cismaru, and Jiang Li Abstract—While complementary FETs are routinely available in BiCMOS processes, the successful integration of HBTs with complementary FETs has not been reported. In this work, we

IM-5964-3

Abstract: IM5964-3 5964 fet IM5964-6 IM-5964-6 Avantek Avantek, Inc IM5964 IM-5964-3/-6
Contextual Info: AVANTEK ObE INC 0A V A N TEK D | DOObOEO fl | T-39-05 IM-5964-3/-6 3 & 6 Watt, 5.9-6.4 GHz Internally Matched Power GaAs FET Features • • • • • • u m it t Avantek IMFET Package 5.9-6.4 GHz Minimum Bandwidth Internally Matched Input/Output Impedance

siemens gaas fet

Abstract: TMS 1600 marking S221
Contextual Info: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,

GRH111

Abstract: GRH111-0 GRH111-27 MGFS52BN2122A GRH111-1
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SVIOFS52BM2122Â 2.1 - 2.2 GHz BAND 160W GaAs FET D E S C R IP TIO N The MGFS52BN2122A is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees

Contextual Info: HE WLE TT-PACKARD/ CMPNTS blE D HEW LETT PACKARD • 4447304 OQDTflTb “Ì7S * H P A ATF-13170 2-16 GHz Low Noise Gallium Arsenide FET 70 mil Package Features Low Noise Figure: 1.0 dB typical at 12 GHz High Associated Gain: 10.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi <ib

Avantek S

Abstract: S717 IM-4450-3 im4450-6 Avantek F4-450
Contextual Info: AVANTEK IN C Ot>E D | i m i l f c i b AVANTEK 1M-4450-3/-6 3 & 6 Watt, 3.7-4.2 GHz Internally Matched Power GaAs FET T-39-05 Avantek IMFET Package Features • • • • • • D O O tDlb b | 4.4-5.0 GHz Minimum Bandwidth Internally Matched Input/Output Impedance

HAT1058C

Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,

AVANTEK transistor

Abstract: ATF-13136-TR1
Contextual Info: A V A N T E K INC EOE D AVANTEK i m m 0GQb54b 2 ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET "T -^ -Z S Features Avantek 36 mlcro-X Package1 • Low Noise Figure: 1.2 dB typical at 12 GHz • High Associated Gain: 9.5 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB

fet ft 20 GHZ

Abstract: SMG50 fet probe service manual
Contextual Info: 1.5 GHz Active Probe TAP1500 Data Sheet Easy to Use Connects Directly to DPO7000 and DPO/MSO4000 Series Oscilloscopes Using the TekVPI Probe Interface Provides Automatic Units Scaling and Readout on the Oscilloscope Display Easy Access to Oscilloscope Probe Menu Display for Probe