FET DIODE Search Results

E67349

Abstract: TLP176D
Contextual Info: TO SH IBA TENTATIVE TLP176D TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET TLP176D MODEM IN PC Unit in mm MODEM •FAX CARD TELECOMMUNICATION The TOSHIBA TLP176D consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a SOP,

GaAs FET operating junction temperature

Abstract: E67349 TLP176A
Contextual Info: TO SH IBA TENTATIVE TLP176A TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET TLP176A MEASUREMENT INSTRUMENT U n it in mm DATA ACQUISITION TELECOMMUNICATION PROGRAMMABLE CONTROL The TOSHIBA TLP176A consists of gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a SOP,

MTP2955E

Abstract: AN569 MTP2955E/D
Contextual Info: MOTOROLA Order this document by MTP2955E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP2955E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS

2sk2903

Contextual Info: 2SK2903-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications 2.54 Switching regulators UPS Uninterruptible Power Supply DC-DC converters

HIP4081 amplifier circuit diagram class D

Abstract: stepper motor hip4081 HIP4081 pwm controller class d amplifier schematic hip4080 HIP4080 amplifier circuit diagram class D HIP4081IP hip4081 hip4080 h-bridge gate drive schematics circuit HIP4081 pwm AN9325
Contextual Info: [ /Title HIP40 81 /Subject (80V/2 .5A Peak, High Frequency Full Bridge FET Driver) /Autho r () /Keywords (Intersil Corporation, Semiconductor, HIP40 8X, full bridge, H bridge, Hbridge, configuration, driver, pre- HIP4081 80V/2.5A Peak, High Frequency Full Bridge FET Driver

a2324

Abstract: k1986 A2325 2SK1986-01 T0220AB A2323
Contextual Info: 2SK1986-01 FUJI PO W E R M O S-FET N-CHANNEL SILICON POWER MOS-FET -FAP-IIA SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hicjh voltage

2SK2907-01R

Contextual Info: 2SK2907-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-3PF 15.5 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 Applications 3.2 +0.3 ±0.3 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 High speed switching

2SJ180

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ180 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ180, P-channel vertical type MOS FET, is a switching device

2SJ204

Abstract: marking j5a 2SK1582 T200 T400 marking h15 fet marking LR
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SJ204 P-CHANNEL MOS FET FOR SWITCHING The 2SJ204, P-channel vertical type MOS FET, is a switching device PACKAGE DIMENSIONS Unit : mm w hich can be driven d ire ctly by the o u tp u t of ICs having a 5 V power source. 2.8 ± 0.2

tlp250

Abstract: Inverter TLP250 TLP250 application 200H E67349 VDE0884
Contextual Info: TO SH IBA TLP250 TOSHIBA PHOTOCOUPLER TRANSISTOR INVERTER INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE GaAM s IRED & PHOTO-IC TLP250 U nit in mm The TOSHIBA TLP250 consists of a GaA€As light emitting diode and a integrated photodetector.

Contextual Info: IDTQS3126 HIGH-SPEED CMOS QUADRUPLE BUS SWITCH WITH INDIVIDUAL ACTIVE INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUADRUPLE BUS SWITCH WITH INDIVIDUAL ACTIVE HIGH ENABLES FEATURES: • • • • • • IDTQS3126 DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc

TLP191

Abstract: photo diode array E67349 TLP191B
Contextual Info: TLP191B TO SHIBA TENTATIVE TOSHIBA PHOTOCOUPLER G a A M s IRED & PHOTO-DIODE ARRAY TELECOMMUNICATION PROGRAMMABLE CONTROLLERS MOS GATE DRIVER MOS FET GATE DRIVER TLP191B Unit in mm 6 4 The TOSHIBA MINI FLAT COUPLER TLP191B is a small outline coupler, suitable for surface mount assembly.

IC-3371

Abstract: 101DC 16PIN MEI-1202 PA1603CX PA1603
Contextual Info: DATA SHEET N E COMPOUND FIELD EFFECT POWER TRANSISTOR r C i — I I I « , , P 1 A 6 3 MONOLITHIC POWER M OS FET ARRAY DESCRIPTION T h e ¿¿PA1603 is M o n o lith ic N -c h a n n e l P o w e r M O S FET A rra y th a t b u ilt CONNECTION DIAGRAM in 4 circu its, C lu m p D io d e and resistances d esig n e d fo r LED, R elay,

2SJ601-Z

Abstract: 2SJ601 a2531
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ601 is P-channel MOS Field Effect Transistor designed PART NUMBER for solenoid, motor and lamp driver. PACKAGE

TEA-1035

Abstract: 2SK1292 Low Forward Voltage Diode MEI-1202
Contextual Info: DATA SHEET NEC À MOS FIELD EFFECT POWER TRANSISTOR 2SK1292 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1292 is N-channel MOS Field Effect Transistor designed for PACKAGE DIMENSIONS in millimeters solenoid, motor and lamp driver.

Contextual Info: November 1998 FDG6304P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to

Small Signal MOSFETs

Contextual Info: November 1998 FDG6302P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to

Designing internal Type II Compensation for Current Mode DC-DC converter

Abstract: 6153
Contextual Info: SP6153 300kHz Synchronous Buck Controller with Frequency Synchronization FEATURES „ 4.5V → 30V Input step down converter „ Built-in feedback compensation with feed forward „ Overcurrent circuit protection with auto-restart using FET RDSon sensing „ 300kHz fixed switching frequency

2SK2212

Contextual Info: 2SK2212 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC – DC converter,Motor Control

Hitachi DSA001651

Contextual Info: 2SK1647 L , 2SK1647(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

2SK1775 equivalent

Abstract: 2SK1342 2SK1775 DSA003639
Contextual Info: 2SK1775 Silicon N-Channel MOS FET ADE-208-1320 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter

2SK1058

Abstract: 2SK135 audio amplifier 2sk135 audio application 2sk135 2sk135 application 2SK134 2SK1057 2SK133 2sk1058 2sj162 2sk1058 equivalent
Contextual Info: 2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application TO–3P Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • • • • • • • 3 Good frequency characteristic High speed switching Wide area of safe operation

Hitachi DSA001651

Contextual Info: 2SK2582 Silicon N-Channel MOS FET Preliminary November 1996 Application High speed power switching Features N N N N N Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline

2SK1836

Abstract: 2SK1837 K1836 K1837 DSA003639
Contextual Info: 2SK1836, 2SK1837 Silicon N-Channel MOS FET ADE-208-1326 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter