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    FET BOOK Search Results

    FET BOOK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    FLMP22W0
    Amphenol Communications Solutions Receptacle, FLM Series, Zhaga Book 20, LEX-MR Right Angle SMT, Pin Contacts White PDF
    FLMP2200
    Amphenol Communications Solutions Receptacle, FLM Series, Zhaga Book 20, LEX-MR Right Angle SMT, Pin Contacts, Black PDF
    FLMP23W0
    Amphenol Communications Solutions Receptacle, FLM Series, Zhaga Book 20, LEX-MR, Poke-In Wire Termination, Pin Contacts, White PDF
    FLMS2300
    Amphenol Communications Solutions Plug, FLM Series, Zhaga Book 20, LEX-LP, Poke-In Wire Termination, Socket Contacts, Black PDF
    FLMS2100
    Amphenol Communications Solutions Plug Housing, FLM Series, Zhaga Book 20, LEX-LP for Crimp Socket Contacts, Black PDF
    SF Impression Pixel

    FET BOOK Price and Stock

    Efficient Power Conversion

    Efficient Power Conversion GAN-FET-BOOK---DC-DC

    TEXT DC-DC CONVERTER HANDBOOK
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    DigiKey GAN-FET-BOOK---DC-DC Bulk 10 1
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    Efficient Power Conversion GAN-FET-BOOK-WIPO

    TEXT WIRELESS POWER HANDBOOK
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    DigiKey GAN-FET-BOOK-WIPO Bulk 30
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    Efficient Power Conversion GAN-FET-BOOK---WIPO-2ND-EDITION

    TEXT WIRELESS POWER HANDBOOK-2ND
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    DigiKey GAN-FET-BOOK---WIPO-2ND-EDITION Bulk 45
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    Efficient Power Conversion GAN-FET-BOOK-SIMPLIFIED-CHINESE-VERSION

    TEXT GAN TRANSISTORS
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    DigiKey GAN-FET-BOOK-SIMPLIFIED-CHINESE-VERSION Bulk 15
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    FET BOOK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pa1556ah

    Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
    Contextual Info: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET


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    O-251/-252, O-220/-262 SC-96 SC-95 SC-96 OT-23) D10702EJAV0PF00 pa1556ah PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326 PDF

    hitachi fet

    Abstract: Hitachi 2SJ fet array 2SJ series
    Contextual Info: Hitachi Power MOS FET DATA BOOK No. 1 P-Channel 2SJ Series Power MOS FET Array Power MOS FET Module SOP-8 (HAT Series) HITACHI ADE-408-002E


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    ADE-408-002E hitachi fet Hitachi 2SJ fet array 2SJ series PDF

    Contextual Info: Preliminary Datasheet R2J20657BNP R07DS0549EJ0101 Previous No.: R07DS0541EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20657BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver


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    R2J20657BNP R07DS0549EJ0101 R07DS0541EJ0100) R2J20657BNP PDF

    Contextual Info: Preliminary Datasheet R2J20655BNP R07DS0548EJ0101 Previous No.: R07DS0540EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20655BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver


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    R2J20655BNP R07DS0548EJ0101 R07DS0540EJ0100) R2J20655BNP PDF

    Contextual Info: Preliminary Datasheet R2J20658BNP R07DS0550EJ0101 Previous No.: R07DS0542EJ0100 Rev.1.01 Sep 30, 2011 Integrated Driver - MOS FET (DrMOS) Description The R2J20658BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver


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    R2J20658BNP R07DS0550EJ0101 R07DS0542EJ0100) R2J20658BNP PDF

    Contextual Info: Preliminary Datasheet R2J20657BNP R07DS0541EJ0100 Rev.1.00 Sep 01, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20657BNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


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    R2J20657BNP R07DS0541EJ0100 R2J20657BNP PDF

    Contextual Info: Preliminary R2J20653ANP Integrated Driver – MOS FET DrMOS REJ03G1849-0200 Rev.2.00 Dec 21, 2009 Description The R2J20653ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


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    R2J20653ANP REJ03G1849-0200 R2J20653ANP PDF

    Contextual Info: Preliminary Datasheet R2J20654NP R07DS0246EJ0100 Rev.1.00 Jan 25, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20654NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


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    R2J20654NP R07DS0246EJ0100 R2J20654NP w9044 PDF

    R2J20655NP

    Abstract: r2j20655 QFN40 drMOs
    Contextual Info: Preliminary Datasheet R2J20655NP R07DS0200EJ0100 Rev.1.00 Jan 25, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20655NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


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    R2J20655NP R07DS0200EJ0100 R2J20655NP r2j20655 QFN40 drMOs PDF

    Contextual Info: Preliminary Datasheet R2J20656ANP R07DS0201EJ0100 Rev.1.00 Jan 25, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20656ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


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    R2J20656ANP R07DS0201EJ0100 R2J20656ANP Low-si9044 PDF

    Contextual Info: Preliminary R2J20653ANP Integrated Driver – MOS FET DrMOS REJ03G1849-0200 Rev.2.00 Dec 21, 2009 Description The R2J20653ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


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    R2J20653ANP REJ03G1849-0200 R2J20653ANP PDF

    P-HVQFN56-8x8-0

    Abstract: dc-27 QFN56 Datasheet QFN56 intel drMOS compliant
    Contextual Info: Preliminary R2J20605ANP Integrated Driver – MOS FET DrMOS REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Description The R2J20605ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


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    R2J20605ANP REJ03G1821-0300 R2J20605ANP P-HVQFN56-8x8-0 dc-27 QFN56 Datasheet QFN56 intel drMOS compliant PDF

    Contextual Info: Preliminary R2J20652ANP Integrated Driver – MOS FET DrMOS REJ03G1867-0300 Rev.3.00 Feb 26, 2010 Description The R2J20652ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


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    R2J20652ANP REJ03G1867-0300 R2J20652ANP b9044 PDF

    Contextual Info: Preliminary R2J20605ANP Integrated Driver – MOS FET DrMOS REJ03G1821-0300 Rev.3.00 Feb 26, 2010 Description The R2J20605ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


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    R2J20605ANP REJ03G1821-0300 R2J20605ANP PDF

    Contextual Info: Preliminary Datasheet R2J20657NP R07DS0247EJ0100 Rev.1.00 Jan 25, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20657NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this


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    R2J20657NP R07DS0247EJ0100 R2J20657NP bu9044 PDF

    Contextual Info: PRELIMINARY DATA SHEET_ GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSIONS UNIT: mm DESCRIPTION The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7


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    NES2527B-30 NES2527B-30 PDF

    TC-2303

    Abstract: NEC 3377 NE76184A transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085
    Contextual Info: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its


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    NE76184A NE76184A NE76184A-SL NE76184A-T1 NE76184A-T1A TC-2303 NEC 3377 transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085 PDF

    NE6500278

    Abstract: 10NEC 2410 nec
    Contextual Info: PRELIMINARY DATA SHEET_ GaAs MES FET NE6500278 2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band.


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    NE6500278 NE6500278 NE6500278-E3 10NEC 2410 nec PDF

    sn 0716

    Abstract: NEC D 587
    Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION UNIT: mm DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1


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    NE6500496 NE6500496 sn 0716 NEC D 587 PDF

    sp 0937

    Abstract: NEC D 809 F NEC K 2124 NEC D 809 L
    Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NEZ1414-2E 2 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1414-2E is pow er GaAs FET which provides 8.25 +0.15 high gain, high efficiency and high output power in KuGate


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    NEZ1414-2E NEZ1414-2E sp 0937 NEC D 809 F NEC K 2124 NEC D 809 L PDF

    NEC D 809 F

    Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input


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    NES1821B-30 NES1821B-30 NEC D 809 F PDF

    NES1417B30

    Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NES1417B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1417B-30 is power GaAs FET which provides high output power and high gain in the 1.4-1,7GHz band. Internal input


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    NES1417B-30 NES1417B-30 NES1417B30 PDF

    NEC 2561

    Abstract: 2561 nec NEC semiconductor 2561 17-33 0952 2561 a nec NE6501077 nec 0882 p 2 nec 2561 4 pin
    Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S 17.5 ±0.5


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    NE6501077 NE6501077 NEC 2561 2561 nec NEC semiconductor 2561 17-33 0952 2561 a nec nec 0882 p 2 nec 2561 4 pin PDF

    nec 2571 4 pin

    Abstract: gl 2576 NEZ7785-15D NEZ3642-15D NEZ4450-15D NEZ5964-15D NEZ6472-15D nez5964-15dd
    Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer 0.5 ±0.1 for microwave and satellite communications.


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