FET ARRAY Search Results

pa1556ah

Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Contextual Info: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET

hitachi fet

Abstract: Hitachi 2SJ fet array 2SJ series
Contextual Info: Hitachi Power MOS FET DATA BOOK No. 1 P-Channel 2SJ Series Power MOS FET Array Power MOS FET Module SOP-8 (HAT Series) HITACHI ADE-408-002E

Contextual Info: DISCRETE SEMICONDUCTORS PHN70308 7 N-channel 30/80 mQ FET array Objective specification Philips Sem iconductors 1999 Apr 06 PHILIPS Philips Semiconductors Objective specification 7 N-channel 30/80 mQ FET array PHN70308 FEATURES PINNING SOT341-1 SSOP28 • 30 m£2 pass/isolation FET

mu24 dc

Abstract: SWT-2
Contextual Info: APR F*r88uct Specifications Linear Integrated RFA120 Raytheon RFA120 Linear FET Macrocell Array General Features • ■ ■ ■ ■ 8 FET macrocells 4 bipolar macrocells Dual-layer metallization for high integration

pa1520

Abstract: PA1520BH IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET Compound Field Effect Power Transistor µPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The µPA1520B is N-channel Power MOS FET Array that PACKAGE DIMENSIONS built in 4 circuits designed for solenoid, motor and lamp in millimeters

PA1572

Abstract: C10535E C10943X MEI-1202 PT2320 PA1572BH
Contextual Info: DATA SHEET Compound Field Effect Power Transistor µPA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The µPA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and

a1034

Contextual Info: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR ¿¿PA1552B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The /¿PA1552B is N-channel Power MOS FET Array that built in 4 circuits designed, for solenoid, motor and

PA1552BH

Abstract: PA1552 IEI-1213 MEI-1202 MF-1134 PA155
Contextual Info: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1552B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1552B is N-channel Power MOS FET Array in millimeters that built in 4 circuits designed, for solenoid, motor and

Contextual Info: COMPOUND FIELD EFFECT POWER TRANSISTOR PA1524 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS T h e JuPA1524isN-channel Power MOS FET Array that built in 4 in millimeters circuits designed for solenoid, motor and lamp driver.

ISL97652

Abstract: ISL97652IRZ ISL97652IRZ-T ISL97652IRZ-TK TB379 t-con tv lcd LCD TV T-con board 41 pin name
Contextual Info: ISL97652 December 21, 2006 • AVDD boost up to 19.5V OVP threshold , with integrated 2.8APEAK FET • Overvoltage protection (OVP) • 2A integrated AVDD delay FET, with short circuit protection • Dual charge pump controllers for VON and VOFF • VLOGIC buck with integrated 2.5APEAK FET

G10597

Abstract: pa1500bh uPA1500 IEI-1213 MEI-1202 MF-1134 G-1059 PA1500B
Contextual Info: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1500B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver.

pa1560h

Abstract: nec pa1560h PA1560 uPA1560H PA1552
Contextual Info: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µ PA1560 N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and

transistor 431A

Abstract: transistor H 431A h a 431a transistor transistor ti p80 fet p80 10 PIN TRANSISTOR AND MOS FET ARRAY Diode S4 55a
Contextual Info: DATA SHEET PHN70308 7 N-channel 30/80 mi FET array O bjective specification File under Discrete sem iconductors, SC13b Philips Semiconductors 1998 Aug 14 PHILIPS Objective specification Philips Sem iconductors 7 N-channel 30/80 mQ FET array FEATURES • •

G1133

Abstract: C10535E C10943X MEI-1202 6 PIN case mos fet p-channel uPA1523BH
Contextual Info: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1523B P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The µPA1523B is P-channel Power MOS FET Array that built PACKAGE DIMENSIONS in millimeters in 4 circuits designed for solenoid, motor and lamp driver.

Contextual Info: DATA SHEET Compound Field Effect Power Transistor ,uPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The ¿¡PA1520B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp PACKAGE DIMENSIONS in millimeters

Contextual Info: DATA SHEET NEC Compound Field Effect Power Transistor _j PA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The ¿¡PA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, m otor and lamp driver.

Contextual Info: COMPOUND FIELD EFFECT POWER TRANSISTOR PA1527 P-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS The ¿¿PA1527 is P-channel Power MOS FET Array that built in 4 in millim eters circuits designed for solenoid, motor and lamp driver.

pa1560h

Abstract: nec pa1560h PA1560 UPA1560
Contextual Info: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µ PA1560 N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and

uPA1550

Contextual Info: DATA SHEET COMPOUND FIELD EFFECT TRANSISTOR ARRAY µPA1550 N-CHANNEL POWER MOS FET ARRAY FOR SWITCHING µPA1550 is a N-channel vertical power MOS FET and this PACKAGE DRAWING UNIT: mm switching device is available for direct drive by output of 5 V power

TEA-1035

Abstract: IC-3345 UPA1552 UPA1552H MEI-1202 nec li ion
Contextual Info: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The juPA1552 is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance

PA1501h

Abstract: nec pa1501h
Contextual Info: N E C ,r • DATA SHEET iiPA1501 COMPOUND FIELD EFFECT POWER TRANSISTOR - A N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The /¿PA1501 is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and

Contextual Info: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR _ /¿PA1500B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The ¿¡PA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, m otor and lamp driver.

IC-3328

Abstract: *PA1520H JUPA1520 MEI-1202 TEB-1035 MOS FET Array
Contextual Info: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS The juPA1520 is N-channel Power MOS FET Array that built in 4 in millimeters circuits designed for solenoid, m otor and lamp driver. 26.8 MAX. 4.0 FEATURES • 4 V driving is possible

C10535E

Abstract: MEI-1202 PA672T FET MARKING
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA672T N-CHANNEL MOS FET ARRAY FOR SWITCHING The µPA672T is a super-mini-mold device provided PACKAGE DIMENSIONS in millimeters with two MOS FET elements. It achieves high-density +0.1 0.2 –0 mounting and saves mounting costs.