FET 50V Search Results

LF356 pin diagram

Abstract: IC LF356 LF355L LF355-LF356-LF357 LF157 lf357 equivalent IC LF356 datasheet LF155-LF255-LF355 LF157-LF257-LF357 LF156
Contextual Info:  . . . . . . . . LF155-LF255-LF355 LF156-LF256-LF356 LF157-LF257-LF357 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS HIGH INPUT IMPEDANCE J-FET INPUT STAGE HIGH SPEED J-FET OP-AMPs : up to 20MHz, 50V/µs OFFSET VOLTAGE ADJUSTMENT DOES NOT DEGRADE DRIFT OR COMMON-MODE

sr 4416

Abstract: LF157 LF156 IC LF356 Lf356 application 25R8 LF256
Contextual Info: LF155 - LF255 - LF355 LF156 - LF256 - LF356 LF157 - LF257 - LF357 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS . . . . . . . . HIGH INPUT IMPEDANCE J-FET INPUT STAGE HIGH SPEED J-FET OP-AMPs : UP to 20MHz, 50V/µs OFFSET VOLTAGE ADJUST DOES NOT DEGRADE DRIFT OR COMMON-MODE

LF356 pin diagram

Abstract: LF157-LF257-LF357 IC LF356 LF157 lf357 equivalent lf156 LF355L LF355-LF356-LF357 LF156-LF256-LF356 LF155
Contextual Info: LF155-LF255-LF355 LF156-LF256-LF356 LF157-LF257-LF357 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS . . . . . . . . HIGH INPUT IMPEDANCE J-FET INPUT STAGE HIGH SPEED J-FET OP-AMPs : up to 20MHz, 50V/µs OFFSET VOLTAGE ADJUSTMENT DOES NOT DEGRADE DRIFT OR COMMON-MODE

LF156

Abstract: LF157 LF356 pin diagram ixlf wideband ampifiers LF155 LF255 LF256 IC LF357 LF355
Contextual Info: rZ T LF155 - LF255 - LF355 LF156 - LF256 - LF356 LF157 - LF257 - LF357 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS S G S -T H O M S O N . HIGH INPUT IMPEDANCE J-FET INPUT STAGE . HIGH SPEED J-FET OP-AMPs : UP to 20MHz, 50V/ns • OFFSET VOLTAGE ADJUST DOES NOT

LF156

Abstract: LF157 LF356 pin diagram SCS PI LF155 LF255 LF256 LF257 LF355 LF355N
Contextual Info: LF155 - LF255 - LF355 LF156 - LF256 - LF356 [I ê ¥ []M [l(ê S LF157 - LF257 - LF357 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS SGS-THOMSON M ^ » • HIGH INPUT IMPEDANCE J-FET INPUT STAGE > HIGH SPEED J-FET OP-AMPs : UP to 20MHz, 50V/(xs ■ OFFSET VOLTAGE ADJUST DOES NOT

LF157

Abstract: LF355-LF356-LF357 1012C LF156 LF357 CH pin out of IC LF356 IC LF155
Contextual Info: LF155-LF255-LF355 LF156-LF256-LF356 LF157-LF257-LF357 7/ WI DE BANDWI DTH SI NGLE J- FET OPERATI ONAL AMPLI FI ERS . HIGH INPUT IMPEDANCE J-FET INPUT STAGE • HIGH SPEED J-FET OP-AMPs : up to 20MHz, 50V/jis ■ O FFSETVO LTAGEADJUSTM ENTDOESNOT DEGRADE DRIFT OR COMMON-MODE

FZJ 101

Contextual Info: C r C . T U n M C n iü o lio m U IY IO U r a LF155 - LF255 LF156 - LF256 - LF355 - LF356 LF157 - LF357 - LF257 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS . HIGH INPUT IMPEDANCE J-FET INPUT STAGE . HIGH SPEED J-FET OP-AMPs : UP to 20MHz, 50V/ns • OFFSET VOLTAGE ADJUST DOES NOT

2SK2973

Abstract: 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES * High power gain:Gpe>13dB « VDD=9.6V,f=450MHz,Pin= 17dBm * High efficiency:55% typ.

Contextual Info: MOTOROLA Order th is docum ent by MTB3N60E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB3N60E1 TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS D2PAK-SL Straight-Leaded

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

ic at 1040a

Abstract: 1kW flyback PFC 10kw pfc 24v active clamp forward converter
Contextual Info: SC531 Triple Low-side FET Driver with Digitally Controlled Current Limit POWER MANAGEMENT Features             Description Dual 2A Source, 4A Sink FET Drivers Second Channel Enable Independent Drive Supplies Auxiliary 2A Source, 4A Sink FET Driver

Contextual Info: SC531 Triple Low-side FET Driver with Digitally Controlled Current Limit POWER MANAGEMENT Features             Description Dual 2A Source, 4A Sink FET Drivers Second Channel Enable Independent Drive Supplies Auxiliary 2A Source, 4A Sink FET Driver

ISL97652

Abstract: ISL97652IRZ ISL97652IRZ-T ISL97652IRZ-TK TB379 t-con tv lcd LCD TV T-con board 41 pin name
Contextual Info: ISL97652 December 21, 2006 • AVDD boost up to 19.5V OVP threshold , with integrated 2.8APEAK FET • Overvoltage protection (OVP) • 2A integrated AVDD delay FET, with short circuit protection • Dual charge pump controllers for VON and VOFF • VLOGIC buck with integrated 2.5APEAK FET

transistor d 965 al

Contextual Info: iNàiiììian MOTOROLA Order this document by MTB3N60E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB3N60E1 TM OS E-FET High Energy Pow er FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS D2PAK-SL Straight-Leaded

Contextual Info: TetraFET D5011UK METAL GATE RF SILICON FET MECHANICAL DATA A N & D  % C $ ! # " B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 50V – 500MHz SINGLE ENDED H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F • SUITABLE FOR BROAD BAND APPLICATIONS

GT 1081

Abstract: PLC 168 D5002UK gt 2182
Contextual Info: TetraFET D5002UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 50V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS

300w amplifier 30mhz

Abstract: 300w rf amplifier uhf D5050UK d5050 30MHZ 500w HF Amplifier 300w 300w rf amplifier
Contextual Info: TetraFET D5050UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 50V – 30MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS

enamelled copper wire

Abstract: semeLab 051 b649 D5001UK J102 fet
Contextual Info: TetraFET D5001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS

J102 fet

Abstract: D5001UK
Contextual Info: TetraFET D5001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS

transistor t06

Abstract: 828 TRANSISTOR equivalent
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINEDRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.

Contextual Info: TetraFET D5002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 50V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS

D5001UK

Contextual Info: TetraFET D5001UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS

d5030

Abstract: D5030UK 064R
Contextual Info: TetraFET D5030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 50V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: TetraFET D5007UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 50V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J PIN 1 SOURCE PIN 2 DRAIN