FET 5080 Search Results

Contextual Info: BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK7510-100B

Abstract: 7610-100B
Contextual Info: BUK7510-100B N-channel TrenchMOS standard level FET Rev. 03 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK7610-100B

Contextual Info: BUK7610-100B N-channel TrenchMOS standard level FET Rev. 03 — 12 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: CFK2062-P5 ÊSH9t Product S p ecificatio n s M ay 1996 iof4 2.3 to 2.5 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

4318J

Abstract: shab
Contextual Info: JCEIEMTEK Product S p ecificatio n s M ay 1996 iof4 Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package CFK2062-P1 800 to 900 MHz +30 dBm Power GaAs FET

SE 0947

Abstract: FET 3878 0942S application of ic 7474
Contextual Info: ICELERiTEK CFK2162-P1 800 to 900 MHz +34 dBm Power GaAs FET Product Specifications M ay 1996 1 o f 4 Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products

Contextual Info: SSiSR Ê TE K Product Specifications M ay 1996 1 of 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

Contextual Info: TO -22 0A B BUK7510-100B N-channel TrenchMOS standard level FET Rev. 4 — 4 January 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: TO -22 0A B BUK7510-100B N-channel TrenchMOS standard level FET Rev. 4 — 4 January 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

FET 4953

Abstract: EL 431 044 PBA FET CFK2162-P5 CFK2162-P5-000T R15-G IGD 507 an
Contextual Info: « i e o i K Product S p ecificatio n s D ecem ber 1997 iof4 2.3 to 2.5 GHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products

Contextual Info: « i f i i m i CFK2162-P3 r Product Specifications D ecem b er 1997 iof4 1.8 to 2.0 GHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products

2794J

Abstract: AFL SO-8
Contextual Info: 5 €SLER!TEK CFK2162-P5 2.3 to 2.5 GHz +34 dBm Power GaAs FET P roduct S p ec ifica tio n s M ay 19 96 1 of 4 Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products

Contextual Info: r e i C D iw CFK2162-P1 if Product Specifications D ecem ber 1997 1 of 4 800 to 900 MHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products

IGD 507 an

Contextual Info: m CDIKV Product S pecificatio n s D ecem ber 1 9 9 7 CFK2162-P5 2.3 to 2.5 GHz +34 dBm Power GaAs FET 1 of 4 Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products

lambda LDS

Abstract: CFK2062-P1 CFK2062-P1-000T ita27
Contextual Info: CFK2062-P1 P ro d u c t S p e c ific a tio n s D ecem ber 1997 1 of 4 800 to 900 MHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

PBA FET

Abstract: CFK2062-P5 CFK2062-P5-000T
Contextual Info: s i m B P H m P rod u ct S p e cifica tio n s D ecem b er 1997 iof4 CFK2062-P5 r 2.3 to 2.5 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

transistor C5080

Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Contextual Info: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295

Contextual Info: 9 e SLE B Ê TE K P roduct S p ecificatio n s D e ce m b er 1 9 9 7 1 o f 4 CFK2062-P1 800 to 900 MHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

CFK2062-P3

Abstract: CFK2062-P3-000T pt 4115 FET 4953
Contextual Info: .fCICDITClf P ro d u c t S p e c ific a tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

Contextual Info: 9 ~ n ~ f a g j g ffg y Product S p ec ifica tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

7474 pin out diagram

Abstract: FET 4953 lm 7223 PBA FET CFK2162-P1 CFK2162-P1-000T k 3878 4953 FET LM 7926
Contextual Info: f r a E D i K CFK2162-P1 i r P ro d u c t S p e c ific a tio n s D e c e m b e r 1 9 9 7 1 o f 4 800 to 900 MHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45 % Linear Power Added Efficiency

lambda LMS

Abstract: 5B42 CFK2162-P3 CFK2162-P3-000T
Contextual Info: « i m w i P ro d u c t S p e c ific a tio n s D ecem ber 1997 iof4 CFK2162-P3 r 1.8 to 2.0 GHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power O utput □ P roprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third O rder Products

7610

Abstract: 7610-100B
Contextual Info: BUK75/7610-100B TrenchMOS standard level FET Rev. 02 — 19 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

Contextual Info: BUK75/7610-100B TrenchMOS standard level FET Rev. 01 — 09 April 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.