FET 20 DB 14 GHZ Search Results

SSOP-20

Abstract: AA260-85 AA260-85LF
Contextual Info: DATA SHEET AA260-85, AA260-85LF: GaAs IC 5-Bit Digital Attenuator 1 dB LSB 300 kHz–2 GHz Features ● 20 19 18 17 16 15 2 dB 14 7 13 8 12 9 1 dB 11 10 NEW 4 dB 6 The AA260-85 is a 5-bit, GaAs IC FET digital attenuator in a lowcost SSOP-20 package. This attenuator has an LSB of 1 dB and a

2DB25

Abstract: AA260-85LF
Contextual Info: DATA SHEET AA260-85, AA260-85LF: GaAs IC 5-Bit Digital Attenuator 1 dB LSB 300 kHz–2 GHz Features ● 20 19 18 17 16 15 2 dB 14 7 13 8 12 9 1 dB 11 10 NEW 4 dB 6 The AA260-85 is a 5-bit, GaAs IC FET digital attenuator in a lowcost SSOP-20 package. This attenuator has an LSB of 1 dB and a

SSOP20PIN

Contextual Info: DATA SHEET AA260-85, AA260-85LF: GaAs IC 5-Bit Digital Attenuator 1 dB LSB 300 kHz–2 GHz Features 20 19 18 17 16 15 2 dB 14 7 13 8 12 9 1 dB 11 10 NEW 4 dB 6 The AA260-85 is a 5-bit, GaAs IC FET digital attenuator in a lowcost SSOP-20 package. This attenuator has an LSB of 1 dB and a

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator With Driver 1,2,4,8 dB Bits DC-2 GHz EBAIpHa AK402D4-31 Features • 4 dB Bit Logic “0” at Insertion Loss ■ Designed for Military Applications ■ 14 Lead Metal Surface Mount Package ■ Low DC Power Consumption -20 mW per bit

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator With Driver 1,2,4,8 dB Bits DC-2 GHz ËSAIphi AK002D4-31 Features Designed for Military Applications 14 Lead Metal Surface Mount Package Low DC Power Consumption -20 mW Per Bit Integral Driver +5V, -5V, CMOS & TTL Compatible

Contextual Info: GaAs MMIC FET 4 Bit Digital Attenuator ElAlpha With Driver 1,2,4,8 dB Bits DC-2 GHz AK002D4-31 Features • Designed for Military Applications ■ 14 Lead Metal Surface Mount Package ■ Low DC Power Consumption -20 mW Per Bit ■ Integral Driver +5V, -5V, CMOS & TTL

Contextual Info: GaAs MMIC FET 2 Bit Digital Attenuator With Driver 16 and 32 dB Bit Values DC-2 GHz EBAlph AK002D2-24 Features • Designed for Commercial Applications ■ Surface Mount 14 Lead SOIC ■ Low DC Power Consumption ~ 20 mW Per Bit ■ Integral Driver +5V, -5V; CMOS and TTL

AK002D2-24

Abstract: AD004T2-00 AD004T2-11 AE002M2-29 AK002D4-24 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
Contextual Info: GaAs MMIC FET 2 Bit Digital Attenuator With Driver 16 and 32 dB Bit Values DC-2 GHz EBAlph AK002D2-24 Features • Designed for Commercial Applications ■ Surface Mount 14 Lead SOIC ■ Low DC Power Consumption ~ 20 mW Per Bit ■ Integral Driver +5V, -5V; CMOS and TTL

se 617

Contextual Info: GaAs MMIC FET 2 Bit Digital Attenuator With Driver 16 and 32 dB Bit Values DC-2 GHz EEA lph a AK002D2-24 A Features • Designed for Commercial Applications ■ Surface Mount 14 Lead SOIC ■ Low DC Power Consumption ~ 20 mW Per Bit ■ Integral Driver +5V, -5V; CMOS and TTL

rf attenuator soic

Abstract: DC bias of FET 2 watt fet DC bias of gaas FET GHz Power FET
Contextual Info: Section 1 RF GaAs MMIC Products in Plastic Packages Table of Contents GaAs MMIC Control FET in SOT 143 DC-2.5 GHz . 1-4 GaAs MMIC Control FET Series in SOT 23 DC-2.5 GHz .

VNA-25 equivalent

Abstract: 414 monolithic amplifier mcl-25 rf 5253 1007 VNA-25 marking f25 6635 fet MCL 25 marking K gaas fet
Contextual Info: Monolithic Amplifier 0.5-2.5 GHz, Monolithic GaAs FET MMIC Amplifier Product Features • 0.5 – 2.5 GHz • Single Voltage Supply • Internally matched to 50 ohms • Low variation of performance over temperature VNA-25+ VNA-25 + RoHS compliant in accordance

16621

Abstract: 351 fet
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic

Band Power GaAs FET

Abstract: 16621 high power FET transistor s-parameters MGFS45A2527B
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic

MwT1789HL

Abstract: solar schematic
Contextual Info: Application Notes MwT-1789HL DC-4 GHz Packaged FET June 2005 Application Circuit Typical RF Performance bias at Vds=6.5V, Ids=200mA, Ta=25 °C Parameter Units Test Frequency Typical Data MHz 870-960 1930-1990 2400-2600 3400-3500 Gain dB 18 14 11 10 Input Return Loss

MGFS45A2527B

Abstract: 16621
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic

T1789

Abstract: FET application note 3435G
Contextual Info: MwT-1789HL DC-4 GHz Packaged FET Application Note June 2006 Application Circuit: Typical RF Performance bias at Vds=6.5V, Ids=200mA, Ta=25 °C Parameter Units Test Frequency MHz 870-960 1930-1990 2400-2600 3400-3500 Gain dB 18 14 11 10 Input Return Loss dB

HMC216MS8

Abstract: DOUBLE FET
Contextual Info: MICROWAVE CORPORATION HMC216MS8 v01.0801 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 is ideal for: IP3 Input : +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm • WirelessLAN Conversion Loss: 8.5 dB

HMC216MS8

Abstract: h216
Contextual Info: HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: IP3 Input : +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm • WirelessLAN Conversion Loss: 8.5 dB

H216

Abstract: HMC216MS8 gaas fet marking a marking c gaas fet 216MS8E HMC216MS8E
Contextual Info: HMC216MS8 / 216MS8E v02.0705 7 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: IP3 Input : +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm • WirelessLAN Conversion Loss: 8.5 dB

HMC296MS8

Abstract: HMC296MS8E H296 FET MARKING
Contextual Info: HMC296MS8 / 296MS8E v03.0705 7 LOW LO DRIVE DOUBLE-BALANCED FET MIXER, 1.1 - 1.7 GHz Typical Applications Features The HMC296MS8 / HMC296MS8E is ideal for: IP3 Input : +24 dBm @ +11 dBm LO • Miniature Basestations LO Range = +3 to +11 dBm • PCMCIA Conversion Loss: 7 dB

Contextual Info: MGA-65100 Medium Power 2 Stage GaAs FET Cascade What LETT mUtim HEW PA C K AR D Chip Outline Features • • • • Unmatched 2 Stage FET Cascade High Output Power: 24 dBm typical Pi dB at 14 GHz High Gain: 9.5 dB typical Gi dB at 14 GHz Single Supply Bias

HMC296MS8

Contextual Info: MICROWAVE CORPORATION HMC296MS8 v02.1201 LOW LO DRIVE DOUBLE-BALANCED FET MIXER, 1.1 - 1.7 GHz Typical Applications Features The HMC296MS8 is ideal for: IP3 Input : +24 dBm @ +11 dBm LO • Miniature Basestations LO Range = +3 to +11 dBm • PCMCIA Conversion Loss: 7 dB

Contextual Info: data sheet 0A V A N T E K MGA-65100 Medium Power 2 Stage GaAs FET Cascade October, 1989 Features • • • • Avantek Chip Outline Unmatched 2 Stage FET Cascade High Output Power: 24 dBm typical Pi ¿b at 14 GHz High Gain: 9.5 dB typical Gi dB at 14 GHz

HMC216MS8

Contextual Info: OBSOLETE PRODUCT HMC216MS8 / 216MS8E v02.0705 MIXERS - SINGLE & DOUBLE-BALANCED - SMT GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: Input IP3: +25 dBm @ +11 dBm LO • Base Stations