FERROXCUBE VK200 Search Results

TB172

Abstract: FERROXCUBE VK200 vk200 VK200 ferrite choke stackpole 57-1845-24b vk200 rf choke Stackpole 57-9074 Stackpole ferrite Toroid 57-9322 57-1845-24b
Contextual Info: RF input 50Ω L1, L2: Ferroxcube VK200 19/4B ferrite choke 56pF T1 9:1 100Ω 1/4W 10nF 5600pF 470pF 5600pF 10nF 1KΩ POT L3, L4: 6 ferrite beads each Ferroxcube 56 590 65/3B Gen Pur Diode T1: Ferrite core Stackpole 57-1845-24B T2: 7 turns of twisted pair AWG #20, Ferrite core Stackpole 57-9322

MRF323

Abstract: ferroxcube 56-590-65
Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF323 Product Image Designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range.

Johanson 2320

Abstract: 565-9065 FERROXCUBE VK200
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

MRF321

Abstract: ferroxcube 56-590-65
Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.

vk200 coil

Abstract: FERROXCUBE VK200 jmc 5201
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 1 0 Watts

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF323 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

D73 transistor

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc

jmc 5201

Abstract: 5659065 565-9065 jmc 5501 56-590-65 VK200-19
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • • Specified 28 Volt, 400 MHz Characteristics —

ferroxcube 56-590-65

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF323 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 20 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

jmc 5201

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts

vk200 coil

Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON

transistor c 2316

Contextual Info: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF323 The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 2 0 0 - 5 0 0 M H z frequency range. 20 W, 400 MHz RF POWER TRANSISTOR

transistor MRF321

Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04
Contextual Info: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc

j687

Abstract: MRF323 VK200 case 244-04
Contextual Info: Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

MRF454 motorola

Abstract: ferroxcube 56-590-65 56590653B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF454 NPN Silicon RF Power TVansistor . . . designed for power am plifier applications in industrial, commercial and am ateur radio equipment to 30 MHz. • 80 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —

MRF321

Abstract: 3 w RF POWER TRANSISTOR NPN erie redcap capacitors 1N4001 VK200 transistor MRF321
Contextual Info: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed prim arily for wideband large-signal driver and predriver am plifier stages in the 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

56590653B

Abstract: AN 240 Motorola 2305 transistor MRF316 Motorola MRF316
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF316 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 3 0 -2 0 0 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 W atts

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF313 The RF Line NPN Silicon High-Frequency TVansistor . . . designed for wideband amplifier, driver or oscillator applications in military, 1.0 W, 400 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON mobile, and aircraft radio.

VK200-20/4B

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF313 . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio, • Specified 28 Volt, 400 MHz Characteristics —

MRF325

Abstract: MRF-325
Contextual Info: MOTOROLA Order this document by MRF325/D SEMICONDUCTOR TECHNICAL DATA MRF325 . . . designed primarily for wideband large–signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 30 Watts

erie redcap capacitors

Abstract: MRF325 Diode Motorola 316 VK200 MRF-325 transistor HFE 400 1w
Contextual Info: MOTOROLA Order this document by MRF325/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF325 . . . designed primarily for wideband large–signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

MRF323

Abstract: erie redcap capacitors VK200
Contextual Info: MOTOROLA Order this document by MRF323/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF323 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200– 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

ferroxcube for ferrite beads 56-590-65

Abstract: ferroxcube 56-590-65 RF POWER TRANSISTOR NPN ON QE Series ferroxcube ferrite beads beads ferroxcube vk200-20 56590653B 565-9065
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 80 Watts