FERRITE WIRELESS POWER Search Results

BLM03AG102SN1

Contextual Info: Commercialization of High-impedance, Small Chip Ferrite Beads for Power Amplifier Modules in Wireless Mobile Communication Equipment －0603 0201 EIA Size BLM03AG102SN1－ [Body] Murata Manufacturing Co., Ltd. has commercialized a chip ferrite bead, BLM03AG102SN1, boasting the

celular

Abstract: 8031 gps RX881
Contextual Info: SPECTRÜM CONTROL INC. Wireless Components Selection Guide INDUCTOR COMPONENTS Ferrite Chip Beads and Power Beads Ferrite Inductors Ceramic Chip Inductors Coaxial Ceramic Inductors Features / Benefits A p p lica tio n s Ky*i \\* Computers, printers, scanners, LAN & WAN

SAC 1630 L

Contextual Info: DEMO MANUAL DC1969A-A/DC1969A-B LTC4120EUD-4.2/LTC4120EUD Wireless Power Receiver and 400mA Buck Battery Charger Description Demonstration circuit DC1969A is a kit of: the DC1967A-X LTC 4120EUD demonstration board, the DC1968A basic wireless transmitter, a 35mm receiver ferrite disk, and

LFB095051-000

Abstract: M/UPS FERRITE
Contextual Info: Ferrite EMI Cable Cores www.lairdtech.com About Laird Laird is a global technology business focused on enabling wireless communication and smart systems, and providing components and systems that protect electronics. Laird operates through two divisions, Wireless Systems and

PS1008-4R7

Abstract: PS1008-1R8 PS1008-820-N ps1008
Contextual Info: Yageo corporation INDUCTORS / BEADS PS Series SMD Wire Wound Chip Inductors APPLICATIONS Notebook Computers PC Cards Wireless Communication Handheld Devices OUTLINE PRODUCT IDENTIFICATION PS series is the newest shielding type ferrite wire wound chip inductors.

SBK321611T-121Y-S

Abstract: SBK160808T-121Y-S PBY321611T PBY1608 SBK321611T-700Y-S sbk451616 SBK160808T-601Y-S PBY321611T-700 SBY453215T-121Y-S sbk321611t
Contextual Info: YAGEO CORPORATION SMD INDUCTOR / BEADS Multilayer Ferrite Chip Beads SB/PB Series [ PB Series for Large Current ] APPLICATIONS Prevention of high frequency EMI form computers, printers, VCRs, TVs, wireless telephone and other related equipment. OUTLINE PRODUCT IDENTIFICATION

HP4284

Abstract: 16334A tablet hp 1100 marking 6R8 HP marking codes smd inductor 2r2 marking SMD CODES spia3010-1r5-n SMD 1R5 4r7. 8
Contextual Info: SMD Shielded Power Inductors – SPIA Series SPIA Series SPIA series is automatic assembly power inductor which is shielded with ferrite core. It is ideal for portal device DC-DC converter line. Features Applications  RoHS Compliant.  Tablet PC, Smart Phone, GPS, DSC, Wireless Module,STB,Game

SBK160808T-110Y-S

Abstract: PBY201209T-601Y-S PBY453215T-121Y-S PBY321611T-601Y-S SBK160808T-601Y-S SBY322513T-600Y-S PBY160808T-601Y-S SBY100505T-121Y-S PBY201209T-600Y GBK160808T-800Y-S
Contextual Info: YAGEO CORPORATION SMD INDUCTOR / BEADS Multilayer Ferrite Chip Beads SB/PB/NB/GB Series [ SB Series for General Purpose / PB Series for Large Current NB Series for Data Line, Digital Signals, etc. / GB Series for Medium Current ] APPLICATIONS Prevention of high frequency EMI form computers, printers, VCRs, TVs, wireless telephone

uhf circulator

Abstract: circulator isolator macom MAFR-000247-000001 FR12-0009 UHF rfid antenna FR11-0001 FR11-0002 Circulators and isolators MAFRIN0
Contextual Info: M/A-COM Isolator and Circulator Products October 2007 M/A-COM Circulator and Isolator Products M/A-COM circulators and isolators have been used extensively in the RF and telecommunications industries for more than 30 years. Our industry leading products can be found in systems ranging from wireless infrastructure power amplifiers for the

imd 5210

Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

100B270JCA500X

Abstract: 100B390JCA500X 100B201JCA500X GX03005522 MRF282
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

microstrip

Abstract: microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier

MJD310

Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282
Contextual Info: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

CRF24010F

Abstract: 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN CRF24010 127324
Contextual Info: CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher

500 watts amplifier schematic diagram pcb layout

Abstract: MRF19090
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier

MRF1946 equivalent

Abstract: MRF1946A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Pow er Transistors MRF1946 MRF1946A . . . designed for 12.5 volt large-signal power amplifiers in commercial and industrial equipment. • High Common Emitter Power Gain • Specified 12.5 V, 175 MHz Performance

RF-35-0300

Abstract: 9601 mosfet 9450 transistor motorola MOSFET 935
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

350 pf variable capacitor

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

9601 TO 220

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation

Contextual Info: Coils and Inductors Lead Wireless Power Inductors P•F Series / H•PI Series SMD type current inductors are suitable for power supply smoothing chokes, DC/DC voltage converter choke coils, and noise protection measures. P•F and H•PI Series inductors have been developed mainly for

Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

BH Rf transistor

Abstract: AN-938 AN938
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor Designed prim arily for w ideband large signal predriver stages in the VHF frequency range. • • Specified @ 12.5 V, 175 MHz Characteristics O utput Power = 1.5 W Minim um Gain = 11.5 dB

New Low Insertion Loss Circulator

Contextual Info: May 2012 New Low Insertion Loss Circulator By Dave Cruickshank and Brian Hartnett, Skyworks Solutions, Inc. The insertion loss of the output circulator of a power amplifier is critical. It is estimated that every 0.1dB of insertion loss at the power amplifier output costs >3W of RF power further up the chain. Engineering teams from Skyworks Solutions, Inc. and