FEB200 Search Results

40898

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 1 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST 6 AJ LTR DESCRIPTION REV PER DATE EC-0S14 - 0 4 9 6 - 0 4 DWN 0 1 FEB2005 GA JL D ZINC PER 2\ PTFE PER 3\ PHOSPHOR

QQ-B-262

Abstract: MIL-C-26074
Contextual Info: 4 THIS DRAWING IS UN PUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - - LOC A LL RIGHTS RESERVED. AJ R E VIS IO N S DIST 17 DESCRIPTION REV PER E C - 0 S 1 4 - 0 4 9 6 - 0 4 0 1 FEB2005 GA JGH MATERIALS: BODY LEG : ZINC ALLOY (ZAMAK 3).

ADSP-21msp50

Abstract: AD6522 MSP430 gsm AD20MSP430 d6522 vco gsm of GSM sim 300 AD6521
Contextual Info: AD20msp430 SoftFoneTM GSM/GPRS Chipset AD20msp430-CDROM -Feb2000-Slide 1 Global System for Mobile Communication -The Standard that Sets the Standard 557 467 500 Million subscribers 400 280 210 300 200 377 36 1 S AI M TD one A M CD 132 100 AMPS 1998 1999 Million GSM Shipments

Contextual Info: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 20 PUBLICATION RIGHTS LOC REV I S IONS D I ST FT RESERVED. LTR DESCRIPTION DWN DATE R E V I S E D PER 0 G 3 B - 0 I 1 9 - 0 1 APVD EZ 0 I FEB2002 5. 0 ± 0 . 0 5 6 . 6 ± 0 .2

Contextual Info: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 20 PUBLICATION RIGHTS LOC REV I S IONS D I ST FT RESERVED. LTR DESCRIPTION DWN DATE R E V I S E D PER 0 G 3 B - 0 I 19-01 APVD EZ 0 I FEB2002 5 . 0 ± 0 .05 6 . 6 ± 0 .2

MPC740

Abstract: MPC7400 MPC7410 MPC7441 MPC745 MPC750 MPC755 MPC8240 MPC8241 MPC8245
Contextual Info: Motorola Host and Integrated Processor Summary revised FEB2003 755 7400 7410 7441 7450/1 7445 7455 100-133 MHz 603e 200-300 MHz 200-250 MHz 166-200 MHz 266-400 MHz 200-266 MHz 300-333 MHz 300-350 MHz 200-266 MHz 300-400 MHz 300-450 MHz 350-500 MHz 400-550 MHz

ASTMD1710

Abstract: QQB-626
Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 - LOC ALL RIGHTS RESERVED. DIST AJ R E VIS IO N S 6 LTR DESCRIPTION REV PER DATE EC-OS1 4 - 0 4 9 6 - 0 4 DWN 0 1 FEB2005 APVD GA JGH _3 . 9 4 + 0 . 3 8 1

Contextual Info: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 - LOC ALL RIGHTS RESERVED. REVISIONS DIST 6 AJ LTR DESCRIPTION REV PER EC-0514-0496-04 DATE DWN APVD 0 1 FEB2005 AF JL D D SEE 018.29 [-720] SHEET 2491-1

VND1NV04TR-E

Abstract: Power MOSFET SOT-223 VND1NV04-E min33 OMNIFET
Contextual Info: VND1NV04 VNN1NV04 - VNS1NV04 OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance per ch. RON 250 mΩ ILIMH 1.7 A VCLAMP 40 V Current limitation (typ) Drain-source clamp voltage 3 1 TO-252 (DPAK) 2 1 • Linear current limitation

MBRB20H100CT

Contextual Info: LITE-ON SEMICONDUCTOR MBRB20H100CT REVERSE VOLTAGE - 100 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS FEATURES D 2 PAK Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

B1100LB

Abstract: B170LB B180LB B190LB
Contextual Info: LITE-ON SEMICONDUCTOR B170LB thru B1100LB REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 1.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES SMB For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction

B140HB

Contextual Info: LITE-ON SEMICONDUCTOR SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS B140HB REVERSE VOLTAGE - 40 Volts FORWARD CURRENT- 1.0 Ampere FEATURES For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Very Low forward voltage drop

SBC560

Abstract: JESD-51
Contextual Info: SBC560 REVERSE VOLTAGE – 60Volts FORWARD CURRENT – 5 Amperes SCHOTTKY BARRIER RECTIFIER FEATURES TO-126F • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency • High current capability, low VF

STPR2020CTW

Abstract: JESD22-A114
Contextual Info: LITE-ON SEMICONDUCTOR STPR2020CTW REVERSE VOLTAGE - 200 Volts FORWARD CURRENT - 20 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS FEATURES Glass passivated chip Superfast switching time for high efficiency Low forward voltage drop and high current capability

1N5819WL

Abstract: J-STD-020D
Contextual Info: 1N5819WL SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 1.0 Ampere FEATURES SOD-123 • Low Forward Voltage Drop • High Surge Capability and High Current Capability • For Surface Mounted Applications • High Conductance

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR P U B L IC A T IO N LOC ALL RIGHTS RESERVED. REVISIONS DIST 6 AJ LTR A DATE DWN APVD 15M A R 2007 DW JL DESCRIPTION REV PER ECO 0 7 - 0 0 6 1 3 1 D D C C ±0.254[.0 1O]

Contextual Info: LITE-ON SEMICONDUCTOR S12M8-B SERIES SCRs 12 AMPERES RMS 400 thru 800 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 800 Volts On-State Current Rating of 12 Amperes RMS at 80℃ High Surge Current Capability - 100 Amperes

Contextual Info: LITE-ON SEMICONDUCTOR STPR1620CTW REVERSE VOLTAGE - 200 Volts FORWARD CURRENT - 16 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS FEATURES Glass passivated chip Superfast switching time for high efficiency Low forward voltage drop and high current capability

stpra1020

Contextual Info: LITE-ON SEMICONDUCTOR STPRA1020CTW REVERSE VOLTAGE - 200 Volts FORWARD CURRENT - 10 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS FEATURES Glass passivated chip Superfast switching time for high efficiency Low forward voltage drop and high current capability

Contextual Info: LITE-ON SEMICONDUCTOR S12M8-600B SCRs 12 AMPERES RMS 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts High Surge Current Capability - 100 Amperes On-State Current Rating of 12 Amperes RMS at 80℃

Contextual Info: LITE-ON SEMICONDUCTOR T1M5F800A TRIACs 1.0 AMPERES RMS 800 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-92 TO-226AA TO-92 FEATURES One-Piece, Injection-Molded Package Blocking Voltage to 800 Volts Sensitive Gate Triggering in Four Trigger Modes

Contextual Info: L30ESDL5V0C3-1 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 300 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-1 is a dual voltage suppressor designed to protect components which are connected to data and

Contextual Info: VND1NV04 VNN1NV04 - VNS1NV04 OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance per ch. RON 250 mΩ ILIMH 1.7 A VCLAMP 40 V Current limitation (typ) Drain-source clamp voltage 3 1 TO-252 (DPAK) 2 1 2 3 •

NCP1200D60

Abstract: NCP1200P60 optocoupler spice model ncp12000 NCP1200P100 optocoupler spice 4422 mosfet so-8 NCP1200D1 ncp1200D6 NCP1200P40
Contextual Info: NPFSNCP1200/D Rev. 0, Feb-2001 New Product Fact Sheet NCP1200 – PWM Current-Mode Controller for Low Power Universal Off-Line Supplies Overview The NCP1200 is a high per formance off-line controller that simplifies adapter and auxiliary power supply design. The circuit’s novel approach allows