FE5D Search Results

Contextual Info: FE5A thru FE5D Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier Case Style G4 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. * d e t n Features e t a P • • • • • • • • • 0.300 (7.6) MAX. 0.042 (1.07)

Contextual Info: FE5A THRU FE5D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 5.0 Amperes _ FEATURES_ Case Style G4 ♦ ♦ ♦ ♦ ♦ 1 0 25 .4 MIN. ♦ ♦ ♦ ♦ 0.3 0 0 (7.6) MAX. 0.038 {0.962}

L55c

Abstract: fe5d fb5b
Contextual Info: FE5A THRU FE5D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 5.0 Amperes FEATURES ♦ ♦ ♦ ♦ ♦ Case Style G4 1 0 i 25 4 MIN ♦ ♦ ♦ ♦ 0.300 7 6) MAX V / High temperature metallurgically bonded construction

FE5B

Contextual Info: FE5A thru FE5D Glass Passivated Ultrafast Rectifier Case Style G4 ♦ High temperature metallurgically bonded construction ♦ Cavity-free glass passivated junction ♦ Superfast recovery time for high efficiency ♦ Low forward voltage, high current capability

FE5B

Contextual Info: FE5A thru FE5D Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier Case Style G4 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. * d e t n Features e t a P • • • • • • • • • 0.300 (7.6) MAX. 0.042 (1.07)

Contextual Info: FE5A THRU FE5D GLASS PASSIVATED FAST EPITAXIAL RECTIFIER Voltage - 50 to 200 Volts Current - 5.0 Amperes FEATURES ♦ ♦ ♦ ♦ 00-204AP .180 4.6 , .115 C2.9] ♦ ♦ ♦ ♦ <2 1.0 MIN. 125.41 ♦ .300(7.6) MAX. .042 (1.07) .038 (.962) Glass passivated cavity-free junction

fe5d

Contextual Info: FE5A thru FE5D Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier Case Style G4 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. * d e t n Features e t a P • • • • • • • • • 0.300 (7.6) MAX. 0.042 (1.07)

Contextual Info: FE5A THRU FE5D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current -5 .0 Amperes FEATURES ♦ ♦ ♦ ♦ ♦ Case Style G4 & T 1.0 2 5 .4 MIN. 0 . 1 8 0 (4 .6) 0 . 1 1 5 (2 .9) ♦ DIA. ♦ ♦ ♦ 0 .3 0 0 (7.6)

Contextual Info: FE5A THRU FE5D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 5.0 Amperes D * FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Super fast recovery time for high efficiency

Contextual Info: FE5A THRU FE5D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Voltage - Current 5 0 to 2 0 0 Volts - 5 .0 A m peres FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction Superfast recovery times-epitaxiai construction Low forward voltage, high current capability

Contextual Info: FE5A to FE5D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

Contextual Info: FE5A thru FE5D Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier Case Style G4 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. * d e t n Features e t a P • • • • • • • • • 0.300 (7.6) MAX. 0.042 (1.07)

Contextual Info: FE5A THRU FE5D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 5.0 Amperes D * FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Super fast recovery time for high efficiency

transistor pcr 406

Abstract: FC3C 5bc7 FC91 pcr 404 FE7B M68EVB912B32 PCR 406 pcr 306 MC68HC912B32
Contextual Info: MOTOROLA Order this document by AN1718/D SEMICONDUCTOR APPLICATION NOTE A Serial Bootloader for Reprogramming the MC68HC912B32 Flash EEPROM By Gordon Doughman, Field Applications Engineer Software Specialist 1 Introduction The MC68HC912B32 is a member of the M68HC12 family of 16-bit microcontrollers. It contains 32,768

8-bit microcontroller 8 pin package

Abstract: ir sensor 0038 TA 7609 0004H F082A
Contextual Info: High-Performance 8-Bit Microcontrollers Z8 Encore! XP F082A Series Product Specification PS022824-0508 Copyright 2008 by Zilog®, Inc. All rights reserved. www.zilog.com Warning: DO NOT USE IN LIFE SUPPORT LIFE SUPPORT POLICY ZILOG'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

Contextual Info: FE5A / 5B / 5C / 5D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

transistor pcr 406

Abstract: pcr 406 pcr 405 5bc7 pcr 306 pcr 406 f FC54 20cb MC68HC912b32 MC68HC912B32TS
Contextual Info: MOTOROLA Order this document by AN1718/D SEMICONDUCTOR APPLICATION NOTE A Serial Bootloader for Reprogramming the MC68HC912B32 Flash EEPROM By Gordon Doughman, Field Applications Engineer Software Specialist 1 Introduction The MC68HC912B32 is a member of the M68HC12 family of 16-bit microcontrollers. It contains 32,768

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

5SBA20

Abstract: ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249
Contextual Info: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Sem iconductor's part num bers, along with the Data Book in w hich they appear. For Zener and T V S page references, see the Zener/TVS Device Index on page 5 in th is book.

STK 2028

Abstract: RTL 2832 STK 4133 II gc 7137 ad STK 5333 stk 5392 stk 5490 stk 2265 STK 5474 STK 4197
Contextual Info: Mon Feb 6 10:03:42 1995 Page 1 'MENSCH COMPUTER ROM SOFTWARE' 'IRQVCTRS.ASM-IRQ VECTOR EQUATES FOR WDC65C265&#39; 2500 A.D. 65816 Macro Assembler - Version 5.01g -Input Filename : irom2.asm Output Filename : irom2.obj