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    FDY302NZ Search Results

    FDY302NZ Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDY302NZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V SC-89-3 Original PDF 6
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    FDY302NZ Price and Stock

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    onsemi FDY302NZ

    MOSFET N-CH 20V 600MA SC89-3
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    onsemi FDY302NZ (POWERTRENCH)

    Mosfet, N-Ch, 20V, 0.6A, Sot-523; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:600Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Onsemi FDY302NZ
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    Fairchild Semiconductor Corporation FDY302NZ

    MOSFET N-CH 20V SC-89-3
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    Win Source Electronics FDY302NZ 27,000
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    FDY302NZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TR-6010

    Abstract: FDY302NZ SC89
    Contextual Info: FDY302NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5V. • 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V


    Original     		FDY302NZ TR-6010 FDY302NZ SC89 PDF

    Contextual Info: FDY302NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5V. • 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V


    Original     		FDY302NZ PDF

    Contextual Info: FDY302NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5V. • 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V


    Original     		FDY302NZ PDF