FDY302NZ Search Results
FDY302NZ Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| FDY302NZ |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V SC-89-3 | Original | 6 |
FDY302NZ Price and Stock
onsemi FDY302NZMOSFET N-CH 20V 600MA SC89-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDY302NZ | Reel | 3,000 |
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FDY302NZ | Cut Tape | 2 | 1 |
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FDY302NZ | 6,000 |
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Fairchild Semiconductor Corporation FDY302NZMOSFET N-CH 20V SC-89-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDY302NZ | 27,000 |
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FDY302NZ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TR-6010
Abstract: FDY302NZ SC89
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Original |
FDY302NZ TR-6010 FDY302NZ SC89 | |
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Contextual Info: FDY302NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5V. • 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V |
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FDY302NZ | |
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Contextual Info: FDY302NZ Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5V. • 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V |
Original |
FDY302NZ |