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    FDU7N60 Search Results

    FDU7N60 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDU7N60NZTU
    		ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V SGL IPAK Original PDF 780.67KB
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    onsemi FDU7N60NZTU

    MOSFET N-CH 600V 5.5A IPAK
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    DigiKey FDU7N60NZTU Tube 5,040
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    Verical () FDU7N60NZTU 32,480 435
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    Chip Stock FDU7N60NZTU 6,130
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    Fairchild Semiconductor Corporation FDU7N60NZTU

    Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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    Rochester Electronics FDU7N60NZTU 64,295 1
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    FDU7N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UniFET-II FDD7N60NZ / FDU7N60NZ TM N-Channel MOSFET 600V, 5.5A, 1.25 Features Description • RDS on = 1.05 ( Typ.)@ VGS = 10V, ID = 2.75A • Low Gate Charge ( Typ. 13nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FDD7N60NZ FDU7N60NZ PDF

    Contextual Info: FDD7N60NZ / FDU7N60NZTU N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Ω Features Description • RDS on = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		FDD7N60NZ FDU7N60NZTU PDF

    FDU7N60

    Abstract: FDD7N60n FDD7N60NZ FDU7N60NZ
    Contextual Info: FDD7N60NZ / FDU7N60NZ N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25  Features Description • RDS on = 1.05  (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state


    Original     		FDD7N60NZ FDU7N60NZ FDU7N60NZ FDU7N60 FDD7N60n PDF

    FDU7N60

    Abstract: FDD7N60NZ
    Contextual Info: UniFET-II FDD7N60NZ / FDU7N60NZ TM N-Channel MOSFET 600V, 5.5A, 1.25 Features Description • RDS on = 1.05 ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FDD7N60NZ FDU7N60NZ FDU7N60NZ FDU7N60 PDF