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    FDT86106LZ Search Results

    FDT86106LZ Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDT86106LZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.2A SOT-223-4 Original PDF 6
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    FDT86106LZ Price and Stock

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    onsemi FDT86106LZ

    MOSFET N-CH 100V 3.2A SOT223-4
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    DigiKey FDT86106LZ Reel 4,000 4,000
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    Verical () FDT86106LZ 5,730 434
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    FDT86106LZ 3,971 52
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    Fairchild Semiconductor Corporation FDT86106LZ

    Power Field-Effect Transistor, 3.2A I(D), 100V, 0.108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics FDT86106LZ 99 1
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    FDT86106LZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDT86106LZ N-Channel PowerTrench MOSFET 100 V, 3.2 A, 108 mΩ Features General Description ̈ Max rDS on = 108 mΩ at VGS = 10 V, ID = 3.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		FDT86106LZ PDF

    86106LZ

    Abstract: FDT86106LZ FDT86106
    Contextual Info: FDT86106LZ N-Channel PowerTrench MOSFET 100 V, 3.2 A, 108 mΩ Features General Description This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance


    Original     		FDT86106LZ 86106LZ FDT86106LZ FDT86106 PDF

    86106LZ

    Abstract: FDT86106LZ fdt86106 FDT8610
    Contextual Info: FDT86106LZ N-Channel PowerTrench MOSFET 100 V, 3.2 A, 108 mΩ Features General Description This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance


    Original     		FDT86106LZ FDT86106LZ 86106LZ fdt86106 FDT8610 PDF