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    FDT8610 Search Results

    FDT8610 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDT86102LZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 6.6A SOT-223 Original PDF 6
    FDT86106LZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.2A SOT-223-4 Original PDF 6
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    FDT8610 Price and Stock

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    onsemi FDT86106LZ

    MOSFET N-CH 100V 3.2A SOT223-4
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    DigiKey () FDT86106LZ Digi-Reel 5,999 1
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    onsemi FDT86102LZ

    MOSFET N-CH 100V 6.6A SOT223-4
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    DigiKey () FDT86102LZ Digi-Reel 3 1
    • 1 $1.39
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    FDT86102LZ Cut Tape 3 1
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    FDT86102LZ Tape & Reel 4,000
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    Avnet Americas () FDT86102LZ Ammo Pack 1
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    FDT86102LZ Tape & Reel 20 Weeks 4,000
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    Mouser Electronics FDT86102LZ
    • 1 $1.36
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    Verical () FDT86102LZ 2,000 356
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    FDT86102LZ 1,833 39
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    FDT86102LZ 246 9
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    Arrow Electronics FDT86102LZ Cut Strips 246 20 Weeks 1
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    Newark () FDT86102LZ Cut Tape 804 1
    • 1 $1.37
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    FDT86102LZ Tape & Reel 4,000
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    Rochester Electronics FDT86102LZ 2,000 1
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    Richardson RFPD FDT86102LZ 1
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    Avnet Asia FDT86102LZ 20 Weeks 4,000
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    Avnet Silica FDT86102LZ 21 Weeks 4,000
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    EBV Elektronik FDT86102LZ 22 Weeks 4,000
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    Wuhan P&S FDT86102LZ 1,386 1
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    Fairchild Semiconductor Corporation FDT86106LZ

    Power Field-Effect Transistor, 3.2A I(D), 100V, 0.108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics FDT86106LZ 99 1
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    Win Source Electronics FDT86106LZ 23,008
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    Fairchild Semiconductor Corporation FDT86102LZ

    N-Channel PowerTrench® MOSFET 100 V, 6.6 A, 28 mΩ
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    Win Source Electronics FDT86102LZ 12,049
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    FDT8610 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDT86106LZ N-Channel PowerTrench MOSFET 100 V, 3.2 A, 108 mΩ Features General Description ̈ Max rDS on = 108 mΩ at VGS = 10 V, ID = 3.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		FDT86106LZ PDF

    FDT86102LZ

    Contextual Info: FDT86102LZ N-Channel PowerTrench MOSFET 100 V, 6.6 A, 28 mΩ Features General Description ̈ Max rDS on = 28 mΩ at VGS = 10 V, ID = 6.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and


    Original     		FDT86102LZ OT-223 FDT86102LZ PDF

    FDT86102LZ

    Abstract: sot 26 Dual N-Channel MOSFET
    Contextual Info: FDT86102LZ N-Channel PowerTrench MOSFET 100 V, 6.6 A, 28 mΩ Features General Description „ Max rDS on = 28 mΩ at VGS = 10 V, ID = 6.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and


    Original     		FDT86102LZ OT-223 FDT86102LZ sot 26 Dual N-Channel MOSFET PDF

    86106LZ

    Abstract: FDT86106LZ FDT86106
    Contextual Info: FDT86106LZ N-Channel PowerTrench MOSFET 100 V, 3.2 A, 108 mΩ Features General Description This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance


    Original     		FDT86106LZ 86106LZ FDT86106LZ FDT86106 PDF

    86106LZ

    Abstract: FDT86106LZ fdt86106 FDT8610
    Contextual Info: FDT86106LZ N-Channel PowerTrench MOSFET 100 V, 3.2 A, 108 mΩ Features General Description This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance


    Original     		FDT86106LZ FDT86106LZ 86106LZ fdt86106 FDT8610 PDF