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FDP46N30 Datasheets (1)

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Fairchild Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDP46N30		Fairchild Semiconductor	300v N-channel Mosfet	Original	PDF	710.29KB	8

FDP46N30 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FDP46N30 Abstract: MOSFET 300V N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V Contextual Info: UniFET TM FDP46N30 300V N-Channel MOSFET Features Description • 46A, 300V, RDS on = 0.079Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58 nC)	Original	fdp46n30 o-220 mosfet 300v n-channel enhancement mode power mosfet bvdss 30v	PDF
Contextual Info: UniFET TM FDP46N30 300V N-Channel MOSFET Features Description • 46A, 300V, RDS on = 0.079Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58 nC)	Original	fdp46n30	PDF

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FDP46N30

Abstract: MOSFET 300V N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
Contextual Info: UniFET TM FDP46N30 300V N-Channel MOSFET Features Description • 46A, 300V, RDS on = 0.079Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58 nC)

Original

fdp46n30 o-220 mosfet 300v n-channel enhancement mode power mosfet bvdss 30v

PDF

Contextual Info: UniFET TM FDP46N30 300V N-Channel MOSFET Features Description • 46A, 300V, RDS on = 0.079Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 58 nC)

Original

fdp46n30

PDF