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    FDP150N10A Search Results

    FDP150N10A Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDP150N10A
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 50A TO-220-3 Original PDF 9
    FDP150N10A_F102
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 50A TO-220-3 Original PDF 9
    FDP150N10A-F102
    		ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 50A TO-220-3 Original PDF 779.22KB
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    FDP150N10A Price and Stock

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    onsemi FDP150N10A-F102

    MOSFET N-CH 100V 50A TO220-3
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    DigiKey FDP150N10A-F102 Tube 3,188 1
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    Avnet Americas FDP150N10A-F102 Tube 19 Weeks 800
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    Mouser Electronics () FDP150N10A-F102 26,914
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    FDP150N10A-F102 23,500
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    Verical () FDP150N10A-F102 800 800
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    Arrow Electronics () FDP150N10A-F102 800 19 Weeks 800
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    FDP150N10A-F102 650 19 Weeks 50
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    Newark FDP150N10A-F102 Bulk 784 1
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    TME FDP150N10A-F102 1
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    Avnet Asia FDP150N10A-F102 19 Weeks 800
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    onsemi FDP150N10A

    MOSFET N-CH 100V 50A TO220-3
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    DigiKey FDP150N10A Tube 400
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    onsemi FDP150N10A_F102

    Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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    Vyrian FDP150N10A_F102 9,663
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    Micross Components FDP150N10AMD

    Power Field-Effect Transistor
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    Vyrian FDP150N10AMD 850
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    FDP150N10A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDP150N10A

    Contextual Info: FDP150N10A_F102 N-Channel PowerTrench MOSFET 100 V, 50 A, 15 mΩ Features Description • RDS on = 12.5 mΩ ( Typ.)@ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		FDP150N10A PDF

    Mosfet 100V 50A

    Abstract: FDP150N10A
    Contextual Info: FDP150N10A_F102 tm N-Channel PowerTrench MOSFET 100V, 50A, 15mΩ Features Description • RDS on = 12.5mΩ ( Typ.)@ VGS = 10V, ID = 50A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP150N10A Mosfet 100V 50A PDF

    Contextual Info: FDP150N10A_F102 N-Channel PowerTrench MOSFET tm 100V, 50A, 15mΩ Features Description • RDS on = 12.5mΩ ( Typ.)@ VGS = 10V, ID = 50A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been


    Original     		FDP150N10A PDF

    Contextual Info: FDP150N10A N-Channel PowerTrench MOSFET 100 V, 50 A, 15 mΩ Features Description • RDS on = 12.5 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDP150N10A PDF

    Contextual Info: FDP150N10A N-Channel PowerTrench MOSFET 100 V, 50 A, 15 mΩ Features Description • RDS on = 12.5 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDP150N10A PDF