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FDP054N10 Datasheets (1)

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Fairchild Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDP054N10		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TO-220AB-3	Original	PDF		8

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onsemi FDP054N10 MOSFET N-CH 100V 120A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDP054N10	Tube	287		1	1 $5.95 10 $5.95 100 $2.88 1000 $2.88 10000 $2.88	Buy Now
Avnet Americas	FDP054N10	Tube			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Verical ()	FDP054N10		855		125	1 - 10 - 100 - 1000 $2.70 10000 $2.54	Buy Now
	FDP054N10		222		125	1 - 10 - 100 - 1000 $2.70 10000 $2.54	Buy Now
Rochester Electronics	FDP054N10		1,077		1	1 - 10 - 100 $2.41 1000 $2.16 10000 $2.03	Buy Now
TME	FDP054N10				1	1 $5.75 10 $5.18 100 $4.57 1000 $3.56 10000 $3.56	Get Quote

Wuhan P&S	FDP054N10		800		1	1 $6.72 10 $6.72 100 $4.29 1000 $3.26 10000 $3.26	Buy Now
Fairchild Semiconductor Corporation FDP054N10 Trans MOSFET N-CH 100V 144A 3-Pin(3+Tab) TO-220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	FDP054N10		392		1	1 $4.36 10 $2.83 100 $2.05 1000 $1.87 10000 $1.87	Buy Now
Quest Components ()	FDP054N10		313			1 $4.18 10 $4.18 100 $2.58 1000 $2.58 10000 $2.58	Buy Now
	FDP054N10		313			1 $5.74 10 $5.74 100 $2.68 1000 $2.49 10000 $2.49	Buy Now

FDP054N10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FDP054N10 N-Channel PowerTrench MOSFET 100 V, 144 A, 5.5 mΩ Features Description • RDS on = 4.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining	Original	FDP054N10	PDF
Contextual Info: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been	Original	FDP054N10 O-220	PDF
FDP054N10 Contextual Info: FDP054N10 N-Channel PowerTrench MOSFET 100 V, 144 A, 5.5 mΩ Features Description • RDS on = 4.6 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while	Original	FDP054N10 FDP054N10	PDF
FDP054N10 Contextual Info: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	FDP054N10 O-220 FDP054N10	PDF
FDP054N10 Abstract: MOSFET 100V Contextual Info: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	FDP054N10 O-220 FDP054N10 MOSFET 100V	PDF
fdp054n10 Contextual Info: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	FDP054N10 FDP054N10 O-220	PDF
MOSFET 100V Contextual Info: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mW Features Description • RDS on = 4.6mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet	Original	FDP054N10 FDP054N10 O-220 MOSFET 100V	PDF