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    FDP053 Search Results

    FDP053 Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDP053N08B_F102
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSF N CH 80V 75A TO-220 Original PDF 10
    FDP053N08B-F102
    ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 75A TO-220 Original PDF 1.51MB
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    FDP053 Price and Stock

    onsemi

    onsemi FDP053N08B-F102

    Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 480A; 146W; TO220-3
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    TME FDP053N08B-F102 1
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    Verical () FDP053N08B-F102 49,396 240
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    FDP053N08B-F102 1,158 240
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    Avnet Americas () FDP053N08B-F102 Tube 950
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    Mouser Electronics FDP053N08B-F102 499
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    Bristol Electronics FDP053N08B-F102 1,600 1
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    Quest Components () FDP053N08B-F102 1,280
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    FDP053N08B-F102 1,280
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    Rochester Electronics FDP053N08B-F102 51,458 1
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    Flip Electronics FDP053N08B-F102 800
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    FDP053 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDP053N08B

    Contextual Info: FDP053N08B N-Channel PowerTrench MOSFET 80 V, 120 A, 5.3 mΩ Features Description • RDS on = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original
    fdp053n08b PDF

    FDP053N08B

    Contextual Info: FDP053N08B_F102 N-Channel PowerTrench MOSFET 80V, 120A, 5.3mW Features Description • RDS on = 4.2mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original
    fdp053n08b PDF

    fdp053

    Abstract: FDP053N08B 4480 Mosfet
    Contextual Info: FDP053N08B_F102 N-Channel PowerTrench MOSFET 80 V, 120 A, 5.3 mΩ Features Description • RDS on = 4.2 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A • Low Reverse Recovery Charge, Qrr = 62.5 nC This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has


    Original
    fdp053fdp053n08b4480 mosfet PDF

    Contextual Info: FDP053N08B N-Channel PowerTrench MOSFET 80 V, 120 A, 5.3 mΩ Features Description • RDS on = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original
    fdp053n08b PDF