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    FDP030N06B Search Results

    FDP030N06B Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDP030N06B_F102
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 120A TO-220-3 Original PDF 9
    FDP030N06B-F102
    		ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO-220-3 Original PDF 754.77KB
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    FDP030N06B Price and Stock

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    onsemi FDP030N06B-F102

    Trans MOSFET N-CH Si 60V 195A 3-Pin(3+Tab) TO-220AB Tube
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    Verical FDP030N06B-F102 48,500 50
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    Avnet Americas FDP030N06B-F102 Tube 43 Weeks 800
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    Mouser Electronics FDP030N06B-F102 2,915
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    Newark FDP030N06B-F102 Bulk 200
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    Onlinecomponents.com FDP030N06B-F102
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    Rochester Electronics FDP030N06B-F102 258 1
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    TME FDP030N06B-F102 1
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    Avnet Silica FDP030N06B-F102 44 Weeks 50
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    EBV Elektronik FDP030N06B-F102 45 Weeks 50
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    FAIRCHILD FDP030N06B

    FDP030N06B
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    Verical FDP030N06B 800 213
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    Fairchild Semiconductor Corporation FDP030N06B

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    Bristol Electronics FDP030N06B 515 1
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    Quest Components () FDP030N06B 412
    • 1 $4.50
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    FDP030N06B 412
    • 1 $3.75
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    Rochester Electronics FDP030N06B 800 1
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    Micross Components FDP030N06B-F102

    MOSFET N-CH 60V 120A TO220-3
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    Win Source Electronics FDP030N06B-F102 38
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    FDP030N06B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDP030N06B_F102 N-Channel PowerTrench MOSFET 60 V, 195 A, 3.1 mΩ Features Description • RDS on = 2.67 mΩ (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF

    Contextual Info: FDP030N06B_F102 N-Channel PowerTrench MOSFET 60V, 195A, 3.1mΩ Features Description • RDS on = 2.67mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored


    Original     		PDF

    FDP030N06B

    Contextual Info: FDP030N06B_F102 N-Channel PowerTrench MOSFET 60 V, 195 A, 3.1 mΩ Features Description • RDS on = 2.67 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		fdp030n06b PDF