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    FDMS86310 Search Results

    FDMS86310 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMS86310
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 17A 8-PQFN Original PDF 7
    SF Impression Pixel

    FDMS86310 Price and Stock

    onsemi

    onsemi FDMS86310

    MOSFET N-CH 80V 17A/50A 8PQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDMS86310 Tape & Reel 3,000 3,000
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    Avnet Americas FDMS86310 Tape & Reel 3,000 34 Weeks 3,000
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    Mouser Electronics () FDMS86310 7,799
    • 1 $3.26
    • 10 $2.17
    • 100 $1.51
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    FDMS86310 6,649
    • 1 $3.08
    • 10 $2.17
    • 100 $1.51
    • 1000 $1.30
    • 10000 $1.21
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    Verical () FDMS86310 21,000 210
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    • 1000 $1.49
    • 10000 $1.32
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    FDMS86310 2,160 210
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    FDMS86310 835 210
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    Newark () FDMS86310 Tape & Reel 3,000
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    FDMS86310 Tape & Reel 3,000
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    Future Electronics FDMS86310 Reel 34 Weeks 3,000
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    Onlinecomponents.com FDMS86310
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    Rochester Electronics FDMS86310 23,995 1
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    TME FDMS86310 1
    • 1 $2.48
    • 10 $1.89
    • 100 $1.39
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    Ameya Holding Limited FDMS86310 1,317
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    Avnet Asia FDMS86310 34 Weeks 3,000
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    Avnet Silica FDMS86310 35 Weeks 3,000
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    EBV Elektronik FDMS86310 36 Weeks 3,000
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    onsemi FDMS86310-01

    FDMS86310-01
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    Verical FDMS86310-01 1,415 210
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    Rochester Electronics FDMS86310-01 1,415 1
    • 1 -
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    • 100 $1.43
    • 1000 $1.19
    • 10000 $1.06
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    Flip Electronics FDMS86310-01 69,000
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    FDMS86310 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDMS86310

    Contextual Info: FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 mΩ Features General Description „ Max rDS on = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original     		FDMS86310 FDMS86310 PDF

    Contextual Info: FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 mΩ Features General Description ̈ Max rDS on = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original     		FDMS86310 PDF