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    FDMS86310 Search Results

    FDMS86310 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMS86310
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 17A 8-PQFN Original PDF 7
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    FDMS86310 Price and Stock

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    onsemi FDMS86310

    MOSFET N-CH 80V 17A/50A 8PQFN
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    DigiKey () FDMS86310 Digi-Reel 6,053 1
    • 1 $2.87
    • 10 $2.17
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    FDMS86310 Cut Tape 6,053 1
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    FDMS86310 Reel 3,000 3,000
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    Avnet Americas FDMS86310 Reel 3,000 34 Weeks 3,000
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    Mouser Electronics FDMS86310 5,223
    • 1 $2.85
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    Verical FDMS86310 21,000 210
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    Newark () FDMS86310 Reel 3,000 3,000
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    FDMS86310 Reel 3,000
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    Future Electronics FDMS86310 Reel 34 Weeks 3,000
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    Onlinecomponents.com FDMS86310
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    Rochester Electronics FDMS86310 21,099 1
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    TME FDMS86310 1
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    ComSIT USA FDMS86310 2,500
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    Richardson RFPD FDMS86310 3,000
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    EBV Elektronik FDMS86310 36 Weeks 3,000
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    IBS Electronics FDMS86310 3,000
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    onsemi FDMS86310-01

    FDMS86310-01
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    Verical FDMS86310-01 1,415 210
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    Rochester Electronics FDMS86310-01 1,415 1
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    Fairchild Semiconductor Corporation FDMS86310

    FDMS86310 by Fairchild is a single N-channel MOSFET with 80V, 7.2mOhm Rds(on), 78nC Qg, and 96W power handling in a PowerTrench SMT package, ideal for high-efficiency power management.
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    IBS Electronics FDMS86310 3,000
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    FDMS86310 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDMS86310

    Contextual Info: FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 mΩ Features General Description „ Max rDS on = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original     		FDMS86310 FDMS86310 PDF

    Contextual Info: FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 mΩ Features General Description ̈ Max rDS on = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original     		FDMS86310 PDF