FDMS86310 Search Results
FDMS86310 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDMS86310 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 17A 8-PQFN | Original | 7 |
FDMS86310 Price and Stock
onsemi FDMS86310MOSFET N-CH 80V 17A/50A 8PQFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS86310 | Cut Tape | 5,630 | 1 |
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FDMS86310 | Tape & Reel | 3,000 | 34 Weeks | 3,000 |
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FDMS86310 | 6,649 |
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FDMS86310 | 21,000 | 210 |
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FDMS86310 | Tape & Reel | 3,000 | 3,000 |
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FDMS86310 | Reel | 34 Weeks | 3,000 |
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FDMS86310 |
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FDMS86310 | 21,099 | 1 |
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FDMS86310 | 1 |
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FDMS86310 | 3,000 |
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FDMS86310 | 34 Weeks | 3,000 |
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Get Quote | ||||||
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FDMS86310 | 35 Weeks | 3,000 |
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FDMS86310 | 36 Weeks | 3,000 |
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onsemi FDMS86310-01FDMS86310-01 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS86310-01 | 1,415 | 210 |
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FDMS86310-01 | 1,415 | 1 |
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FDMS86310-01 | 45,000 |
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FDMS86310 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
FDMS86310Contextual Info: FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 mΩ Features General Description Max rDS on = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or |
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FDMS86310 FDMS86310 | |
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Contextual Info: FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 mΩ Features General Description ̈ Max rDS on = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or |
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FDMS86310 |