FDMS86300 Search Results
FDMS86300 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDMS86300 | 
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 19A POWER56 | Original | 7 | |||
| FDMS86300DC | 
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FETs - Single, Discrete Semiconductor Products, MOSFET N CH 80V 24A 8-PQFN | Original | 8 | 
FDMS86300 Price and Stock
onsemi FDMS86300DCMOSFET N-CH 80V 24A/76A DLCOOL56 | 
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FDMS86300DC | Cut Tape | 5,146 | 1 | 
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FDMS86300DC | Reel | 596 | 
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FDMS86300DC | 42,837 | 
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FDMS86300DC | 21,000 | 3,000 | 
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FDMS86300DC | 21,000 | 16 Weeks | 3,000 | 
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FDMS86300DC | Bulk | 1,242 | 1 | 
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FDMS86300DC | 6,000 | 1 | 
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FDMS86300DC | 1 | 
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FDMS86300DC | 3,000 | 
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FDMS86300DC | 1 | 
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FDMS86300DC | 16 Weeks | 3,000 | 
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FDMS86300DC | 9,000 | 17 Weeks | 3,000 | 
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FDMS86300DC | 70,100 | 
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FDMS86300DC | 18 Weeks | 3,000 | 
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FDMS86300DC | 9,000 | 
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FDMS86300DC | 3,000 | 3,000 | 
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FDMS86300DC | 310 | 1 | 
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onsemi FDMS86300MOSFET N-CH 80V 19A/80A 8PQFN | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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FDMS86300 | Cut Tape | 3,529 | 1 | 
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FDMS86300 | Reel | 910 | 
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FDMS86300 | 2,693 | 
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FDMS86300 | 3,000 | 3,000 | 
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FDMS86300 | 3,000 | 16 Weeks | 3,000 | 
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FDMS86300 | Reel | 3,000 | 
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FDMS86300 | Reel | 3,000 | 30 Weeks | 3,000 | 
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FDMS86300 | 
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FDMS86300 | 3,000 | 3 | 
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FDMS86300 | 3,000 | 
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FDMS86300 | 16 Weeks | 3,000 | 
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FDMS86300 | 17 Weeks | 3,000 | 
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FDMS86300 | 36,460 | 
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FDMS86300 | 18 Weeks | 3,000 | 
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FDMS86300 | 75,232 | 
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onsemi FDMS86300DC-01FDMS86300 - N-Channel Dual Cool PowerTrench MOSFET | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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FDMS86300DC-01 | 3,102 | 1 | 
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Fairchild Semiconductor Corporation FDMS86300DCN-CHANNEL DUAL 56 POWERTRENCH MOSFET Power Field-Effect Transistor, 24A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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FDMS86300DC | 70 | 
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FDMS86300DC | 3,000 | 
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FDMS86300DC | 57,600 | 
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Fairchild Semiconductor Corporation FDMS86300FDMS86300 by Fairchild is a single N-Channel PowerTrench MOSFET with 80V, 5.8mOhm Rds(on), 86nC Qg, and 104W power dissipation in a POWER 56-8 SMT package. | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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FDMS86300 | 6,000 | 3,000 | 
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FDMS86300 | 32,960 | 
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FDMS86300 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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 Contextual Info: FDMS86300DC N-Channel Dual CoolTM PowerTrench MOSFET 80 V, 110 A, 3.1 mΩ Features  Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package  | 
 Original  | 
FDMS86300DC | |
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 Contextual Info: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 76 A, 3.1 mΩ Features  Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is pr oduced using Fairchild process. Semiconductor’s advanced Power Trench® Advancements in b oth silicon and Dual CoolTM package  | 
 Original  | 
FDMS86300DC | |
FDMS86300DCContextual Info: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 76 A, 3.1 mΩ Features  Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package  | 
 Original  | 
FDMS86300DC FDMS86300DC | |
FDMS86300Contextual Info: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 60 A, 3.1 mΩ Features  Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package  | 
 Original  | 
FDMS86300DC FDMS86300DC FDMS86300 | |
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 Contextual Info: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 76 A, 3.1 mΩ Features  Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package  | 
 Original  | 
FDMS86300DC | |
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 Contextual Info: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 60 A, 3.1 mΩ General Description Features ̈ Dual Cool TM This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package  | 
 Original  | 
FDMS86300DC | |
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 Contextual Info: N-Channel PowerTrench MOSFET 80 V, 42 A, 3.9 mΩ Features General Description  Max rDS on = 3.9 mΩ at VGS = 10 V, ID = 19 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or  | 
 Original  | 
FDMS86300 FDMS86300 | |
FDMS86300Contextual Info: N-Channel PowerTrench MOSFET 80 V, 80 A, 3.9 mΩ Features General Description  Max rDS on = 3.9 mΩ at VGS = 10 V, ID = 19 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or  | 
 Original  | 
FDMS86300 FDMS86300 | |
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 Contextual Info: N-Channel PowerTrench MOSFET 80 V, 42 A, 3.9 mΩ Features General Description ̈ Max rDS on = 3.9 mΩ at VGS = 10 V, ID = 19 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or  | 
 Original  |