FDMS86250 Search Results
FDMS86250 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FDMS86250 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 6.7A 8-PQFN | Original | 7 |
FDMS86250 Price and Stock
onsemi FDMS86250MOSFET N-CH 150V 6.7A/20A 8PQFN |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS86250 | Cut Tape | 8,070 | 1 |
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FDMS86250 | Reel | 14 Weeks | 3,000 |
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FDMS86250 | 5,697 |
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FDMS86250 | 3,000 | 3,000 |
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FDMS86250 | Reel | 3,000 |
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FDMS86250 | Reel | 3,000 | 34 Weeks | 3,000 |
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FDMS86250 |
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FDMS86250 | 4,301 | 3 |
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FDMS86250 | 3,440 |
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FDMS86250 | 3,000 |
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FDMS86250 | 3,000 |
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FDMS86250 | 4,940 |
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FDMS86250 | 3,000 | 14 Weeks | 3,000 |
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FDMS86250 | 15 Weeks | 3,000 |
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FDMS86250 | 16 Weeks | 3,000 |
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FDMS86250 | 6,000 | 1 |
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FDMS86250 | 3,000 | 1 |
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onsemi FDMS86250 (POWERTRENCH)Mosfet, N-Ch, 150V, 30A, Pqfn; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:150V; On Resistance Rds(On):0.019Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.9V; Power Dissipationrohs Compliant: Yes |Onsemi FDMS86250 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS86250 (POWERTRENCH) | Cut Tape | 2,991 | 1 |
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FDMS86250 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDMS86250 N-Channel PowerTrench MOSFET 150 V, 20 A, 25 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
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FDMS86250 | |
Contextual Info: FDMS86250 N-Channel PowerTrench MOSFET 150 V, 20 A, 25 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
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FDMS86250 FDMS86250 | |
Contextual Info: FDMS86250 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 30 A, 25 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been |
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FDMS86250 |