FDMS86250 Search Results
FDMS86250 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDMS86250 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 6.7A 8-PQFN | Original | 7 |
FDMS86250 Price and Stock
onsemi FDMS86250MOSFET N-CH 150V 6.7A/20A 8PQFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS86250 | Cut Tape | 5,198 | 1 |
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FDMS86250 | Reel | 18 Weeks | 3,000 |
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FDMS86250 | 4,740 |
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FDMS86250 | 3,000 | 3,000 |
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FDMS86250 | Cut Tape | 2,121 | 1 |
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FDMS86250 | Reel | 3,000 | 34 Weeks | 3,000 |
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FDMS86250 |
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FDMS86250 | 4,301 | 3 |
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FDMS86250 | 3,440 |
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FDMS86250 | 3,000 |
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FDMS86250 | 3,000 |
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FDMS86250 | 4,810 |
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FDMS86250 | 3,000 | 18 Weeks | 3,000 |
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FDMS86250 | 19 Weeks | 3,000 |
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FDMS86250 | 20 Weeks | 3,000 |
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FDMS86250 | 3,000 | 3,000 |
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FDMS86250 | 3,000 | 1 |
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FDMS86250 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: FDMS86250 N-Channel PowerTrench MOSFET 150 V, 20 A, 25 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
Original |
FDMS86250 | |
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Contextual Info: FDMS86250 N-Channel PowerTrench MOSFET 150 V, 20 A, 25 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and |
Original |
FDMS86250 FDMS86250 | |
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Contextual Info: FDMS86250 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 30 A, 25 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been |
Original |
FDMS86250 |