FDMC8015L Search Results

Contextual Info: FDMC8015L N-Channel Power Trench MOSFET 40 V, 18 A, 26 mΩ Features General Description „ Max rDS on = 26 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

fdmc8015

Contextual Info: FDMC8015L N-Channel Power Trench MOSFET 40 V, 18 A, 26 mΩ Features General Description „ Max rDS on = 26 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

Contextual Info: FDMC8015L N-Channel Power Trench MOSFET 40 V, 18 A, 26 mΩ Features General Description ̈ Max rDS on = 26 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

Contextual Info: MAX16993 Evaluation Kit General Description The MAX16993 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that contains all the components necessary to evaluate the MAX16993 power-management IC (PMIC). The EV kit includes one high-voltage step-down controller and two low-voltage

Contextual Info: MAX16930 Evaluation Kit General Description The MAX16930 evaluation kit EV kit is a fully assembled and tested application circuit for the MAX16930 highvoltage, dual synchronous step-down controller with preboost. The EV kit is set up to provide 5V and 3.3V from an