FDMA8884 Search Results

FDMA8884 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDMA8884		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 6-MLP 2X2	Original	PDF		6

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onsemi FDMA8884 MOSFET N-CH 30V 6.5/8A 6MICROFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDMA8884	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical ()	FDMA8884		423,440		978	1 - 10 - 100 - 1000 $0.38 10000 $0.32	Buy Now
	FDMA8884		36,000		978	1 - 10 - 100 - 1000 $0.38 10000 $0.32	Buy Now
	FDMA8884		1,348		978	1 - 10 - 100 - 1000 $0.38 10000 $0.32	Buy Now
Rochester Electronics	FDMA8884		36,000		1	1 - 10 - 100 $0.34 1000 $0.28 10000 $0.25	Buy Now
Flip Electronics	FDMA8884		542,065			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC FDMA8884 SMALL SIGNAL FIELD-EFFECT TRANSI
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DigiKey	FDMA8884	Bulk			846	1 - 10 - 100 - 1000 $0.35 10000 $0.35	Buy Now
FLIP ELECTRONICS FDMA8884 30V SINGLE N-CHANNEL POWERTRENCH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDMA8884	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.23	Buy Now
Fairchild Semiconductor Corporation FDMA8884 Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	FDMA8884		424,788		1	1 - 10 - 100 $0.34 1000 $0.28 10000 $0.25	Buy Now

FDMA8884 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FDMA8884 Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has	Original	FDMA8884	PDF
Contextual Info: FDMA8884 Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has	Original	FDMA8884	PDF
Contextual Info: FDMA8884 Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has	Original	FDMA8884	PDF
NX3008 Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N Contextual Info: Advanced cross reference list DFN* MOSFETs DFN: discrete flat no-leads in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1	Original	AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N	PDF
Contextual Info: Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.	Original	FDMA8884 FDMA8884	PDF
8884 mosfet Contextual Info: Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.	Original	FDMA8884 FDMA8884 8884 mosfet	PDF
Contextual Info: Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description ̈ Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.	Original		PDF
Contextual Info: Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.	Original	FDMA8884 FDMA8884	PDF