FDI12N50TU Search Results

FDI12N50TU Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDI12N50TU		Fairchild Semiconductor	N-Channel MOSFET 500V, 11.5A, 0.65 Ohm	Original	PDF	308.14KB	9

FDI12N50TU Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FDB12N50 Abstract: FDB12N50TM FDI12N50 FDI12N50TU Contextual Info: UniFETTM FDB12N50TM tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS on = 0.55Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FDB12N50TM FDB12N50TM FDB12N50 FDI12N50 FDI12N50TU	PDF

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FDB12N50

Abstract: FDB12N50TM FDI12N50 FDI12N50TU
Contextual Info: UniFETTM FDB12N50TM tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS on = 0.55Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Original

FDB12N50TM FDB12N50TM FDB12N50 FDI12N50 FDI12N50TU

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