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    FDD86326 Search Results

    FDD86326 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDD86326
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V TRENCH DPAK Original PDF 6
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    FDD86326 Price and Stock

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    onsemi FDD86326

    MOSFET N-CH 80V 8A/37A DPAK
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    Mouser Electronics FDD86326 28,764
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    Verical FDD86326 7,000 255
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    Fairchild Semiconductor Corporation FDD86326

    Power Field-Effect Transistor, 8A I(D), 80V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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    Rochester Electronics FDD86326 7,000 1
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    FDD86326 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m: Features „ Max rDS on = 23 m: at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		FDD86326 O-252) PDF

    FDD86326

    Abstract: FDD86
    Contextual Info: FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m: Features „ Max rDS on = 23 m: at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		FDD86326 O-252) FDD86326 FDD86 PDF

    Contextual Info: FDD86326 N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m: Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		FDD86326 PDF