FDD5N53 Search Results
FDD5N53 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FDD5N53TM_WS |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 530V 4A DPAK | Original | 9 |
FDD5N53 Price and Stock
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Rochester Electronics LLC FDD5N53TMN-CHANNEL POWER MOSFET |
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FDD5N53TM | Bulk | 575 |
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onsemi FDD5N53TM_WSMOSFET N-CH 530V 4A DPAK |
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FDD5N53TM_WS | Reel |
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onsemi FDD5N53TMFDD5N53TM |
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FDD5N53TM | 1,970 | 665 |
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Fairchild Semiconductor Corporation FDD5N53TMPower Field-Effect Transistor, 4A I(D), 530V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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FDD5N53TM | 1,970 | 1 |
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FDD5N53 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UniFETTM FDD5N53/FDU5N53 tm N-Channel MOSFET 530V, 4A, 1.5Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A • Low gate charge ( Typ. 11nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar |
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FDD5N53/FDU5N53 FDD5N53/FDU5N53 FDD5N53 FDU5N53 | |
fdu5n53Contextual Info: UniFETTM FDD5N53/FDU5N53 tm N-Channel MOSFET 530V, 4A, 1.5Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. |
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FDD5N53/FDU5N53 FDD5N53/FDU5N53 FDD5N53 FDU5N53 |