FDD5 Search Results

CBVK741B019

Abstract: F63TNR FDD5612 FDD6680
Contextual Info: FDD5612 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 18 A, 60 V.

FDD5810-F085

Abstract: FDD5810 FDD5810_F085
Contextual Info: FDD5810_F085 N-Channel Logic Level Trench MOSFET 60V, 36A, 27m: Features Applications „ RDS ON = 22m: Typ.), VGS = 5V, ID = 29A „ Motor / Body Load Control „ Qg(5) = 13nC (Typ.), VGS = 5V „ ABS Systems „ Low Miller Charge „ Powertrain Management

Contextual Info: UniFETTM FDD5N53/FDU5N53 tm N-Channel MOSFET 530V, 4A, 1.5Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2A • Low gate charge ( Typ. 11nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

FDD5670

Contextual Info: FDD5670 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: FDD5N50U N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 3 A, 2.0  Features Description • RDS on = 1.65  (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

Mosfet application note fairchild

Contextual Info: FDD5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4 A, 1.5  Features Description • RDS on = 1.38  (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the

mosfet 250V 4A

Contextual Info: FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2  Features Description • RDS on = 1.65  (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state

FDD5N50UTM

Abstract: FDD5N50U FDD5N50UTF
Contextual Info: TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDD6680

Abstract: CBVK741B019 F63TNR FDD5670 FDD marking
Contextual Info: FDD5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • • Low gate charge.

Contextual Info: E M I C O N D U C T O R tm FDD5690 60V N-Channel PowerTrench MOSFET General Description Features • 30 A, 60 V. FL This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDD5612

Contextual Info: March 2001 FDD5612 60V N-Channel PowerTrench 2001 Fairchild Semiconductor Corporation FDD5612 REV. C1 W Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) W DSS IAR Single Pulse Drain-Source

Contextual Info: FDD5353 tm Trench N-Channel Power MOSFET 60V, 50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = 10V, ID = 10.7A ̈ 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

mosfet 500v 4A

Abstract: Mosfet application note fairchild FDD5N50NZTM
Contextual Info: UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5 Features Description • RDS on = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

250AID

Contextual Info: FDD5670 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: FDD5N50NZF N-Channel UniFETTM FRFET MOSFET 500 V, 3.7 A, 1.75 Ω Features Description • RDS on = 1.47 Ω (Typ.) @ VGS = 10 V, ID = 1.85 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS

Contextual Info: FDD5N50 N-Channel UniFETTM MOSFET 500 V, 4 A, 1.4 Ω Features Description • RDS on = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: EMI C O N D U C T O R PRELIMINARY tm FDD5680 N-Channel, PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to m inimize the on-state

FDD5680

Contextual Info: FDD5680 N-Channel, PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior

ultra fast recovery diode

Contextual Info: FDD5N50NZF N-Channel UniFETTM FRFET MOSFET 500 V, 3.7 A, 1.75  Features Description • RDS on = 1.47  (Typ.) @ VGS = 10 V, ID = 1.85 A UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and

FDD5N50TM

Abstract: FDD5N50 FDD5N50TF ULTRA FAST diode 400v 5a
Contextual Info: UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Mosfet FDD

Abstract: 6680 MOSFET TO-252 fairchild CBVK741B019 F63TNR FDD5612 FDD6680 marking 300 to252 C1 MARKING TO-252
Contextual Info: FDD5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 19 A, 60 V. RDS ON = 0.055 Ω @ VGS = 10 V

FDD5690

Contextual Info: =M l C O N D U C T O R tm FDD5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

10.7A

Contextual Info: FDD5353 N-Channel Power Trench MOSFET 60V, 50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = 10V, ID = 10.7A „ 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

Contextual Info: UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5 Features Description • RDS on = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.