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    FDD390N15A Search Results

    FDD390N15A Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDD390N15A
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 26A DPAK Original PDF 9
    FDD390N15ALZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 26A DPAK-3 Original PDF 9
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    onsemi FDD390N15A

    MOSFET N-CH 150V 26A DPAK
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    Onlinecomponents.com FDD390N15A 5,000
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    TME FDD390N15A 1
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    Richardson RFPD FDD390N15A 2,500
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    Chip One Stop FDD390N15A Cut Tape 635 0 Weeks, 1 Days 1
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    onsemi FDD390N15ALZ

    MOSFET N-CH 150V 26A DPAK
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    DigiKey FDD390N15ALZ Reel 2,500 2,500
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    Avnet Americas FDD390N15ALZ Reel 19 Weeks 2,500
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    Mouser Electronics FDD390N15ALZ 7,562
    • 1 $1.47
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    Verical () FDD390N15ALZ 10,000 2,500
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    FDD390N15ALZ 1,944 11
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    Arrow Electronics () FDD390N15ALZ 10,000 19 Weeks 2,500
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    FDD390N15ALZ Cut Strips 1,944 19 Weeks 1
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    Newark () FDD390N15ALZ Cut Tape 4,269 5
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    FDD390N15ALZ Reel 2,500
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    TME FDD390N15ALZ 2,500
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    Richardson RFPD FDD390N15ALZ 2,500
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    Fairchild Semiconductor Corporation FDD390N15A

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    Bristol Electronics FDD390N15A 879 4
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    Quest Components () FDD390N15A 703
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    FDD390N15A 703
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    Fairchild Semiconductor Corporation FDD390N15ALZ

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    Bristol Electronics FDD390N15ALZ 8
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    Win Source Electronics FDD390N15ALZ 30,052
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    FDD390N15A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDD390N15

    Contextual Info: FDD390N15A N-Channel PowerTrench MOSFET 150V, 26A, 40mΩ Features Description • RDS on = 33.5mΩ ( Typ.)@ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDD390N15A FDD390N15A JESD22-A113F J-STD-020D FDD390N15 PDF

    FDD390N15A

    Contextual Info: FDD390N15A N-Channel PowerTrench MOSFET 150 V, 26 A, 40 mΩ Features Description • RDS on = 33.5 mΩ ( Typ.)@ VGS = 10 V, ID = 26 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		FDD390N15A FDD390N15A O-252) PDF

    FDD390N15

    Abstract: FDD390N15ALZ FDD39
    Contextual Info: FDD390N15ALZ N-Channel PowerTrench MOSFET 150 V, 26 A, 42 mΩ Features Description • RDS on = 33.4 mΩ ( Typ.) @ VGS = 10 V, ID = 26 A • Fast Switching Speed This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDD390N15ALZ FDD390N15ALZ FDD390N15 FDD39 PDF

    Contextual Info: FDD390N15ALZ N-Channel PowerTrench MOSFET 150 V, 26 A, 42 mΩ Features Description • RDS on = 33.4 mΩ (Typ.) @ VGS = 10 V, ID = 26 A • Fast Switching Speed This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDD390N15ALZ PDF

    FDD390N15

    Abstract: FDD39
    Contextual Info: FDD390N15A N-Channel PowerTrench MOSFET 150V, 26A, 40mΩ Features Description • RDS on = 33.5mΩ ( Typ.)@ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDD390N15A FDD390N15A FDD390N15 FDD39 PDF

    FDD390N15

    Contextual Info: FDD390N15ALZ N-Channel PowerTrench MOSFET 150V, 26A, 42mΩ Features Description • RDS on = 33.4mΩ ( Typ.) @ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDD390N15ALZ FDD390N15ALZ FDD390N15 PDF

    Contextual Info: FDD390N15A N-Channel PowerTrench MOSFET 150 V, 26 A, 40 mΩ Features Description • RDS on = 33.5 mΩ (Typ.) @ VGS = 10 V, ID = 26 A • Low Gate Charge, QG = 14.3 nC (Typ.) This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDD390N15A PDF

    Contextual Info: FDD390N15ALZ N-Channel PowerTrench MOSFET 150V, 26A, 42mΩ Features Description • RDS on = 33.4mΩ ( Typ.) @ VGS = 10V, ID = 26A • RDS(on) = 42.2mΩ ( Typ.) @ VGS = 4.5V, ID = 20A • Fast Switching Speed This N-Channel MOSFET is produced using Fairchild


    Original     		FDD390N15ALZ PDF

    Contextual Info: FDD390N15ALZ N-Channel PowerTrench MOSFET 150 V, 26 A, 42 m Features Description • RDS on = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A • Fast Switching Speed This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDD390N15ALZ PDF

    FDD390N15

    Abstract: FDD390N15ALZ Ultra Low rds
    Contextual Info: FDD390N15ALZ N-Channel PowerTrench MOSFET 150V, 26A, 42mW Features Description • RDS on = 33.4mW ( Typ.) @ V GS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDD390N15ALZ FDD390N15 FDD390N15ALZ Ultra Low rds PDF

    Contextual Info: FDD390N15A N-Channel PowerTrench MOSFET 150 V, 26 A, 40 mΩ Features Description • RDS on = 33.5 mΩ (Typ.) @ VGS = 10 V, ID = 26 A • Low Gate Charge, QG = 14.3 nC (Typ.) This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDD390N15A PDF