FDD047
Abstract: SA70
Contextual Info: Am29N323D Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Contextual Info: Am29BDS323D Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new designs, S29NS032J supersedes Am29BDS323D. Please refer to the S29NS-J family data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes
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am29bds323ds29ns032js29ns-j23476b5 |
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FDD047
Abstract: SA70
Contextual Info: Am29N323D Data Sheet Retired Product Am29N323D Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.
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Contextual Info: PRELIMINARY Am29BDS323D 32 Megabit 2 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • Single 1.8 volt read, program and erase (1.7 to 1.9 volt) ■ Multiplexed Data and Address for reduced I/O
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Contextual Info: PRELIMINARY Am29BDS323D 32 Megabit 2 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • Single 1.8 volt read, program and erase (1.7 to 1.9 volt) ■ Multiplexed Data and Address for reduced I/O
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S99-50111-001
Abstract: S29AL016D90tfa01 S29AL016D70TFI020E S29AL008D70TFI020 S29AL016D70TFI010H AM29LV040B-90JD S29AL016D70TFI010E AM29LV040B-70JF AM29LV010B-70ED AM29LV040B-70JD
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA October 10, 2008 Advanced Change Notification No: Subject: 2729 Obsolescence of the Discrete S29AL008D, S29AL016D, Am29LV010B, Am29LV002B, Am29LV200B, Am29LV004B, Am29LV040B, Am29LV081B,
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s29al008ds29al016dam29lv010bam29lv002b+16am29lv200bam29lv004bam29lv040bam29lv081bam29lv008bam29ds163ds99-50111-001s29al016d90tfa01s29al016d70tfi020es29al008d70tfi020s29al016d70tfi010ham29lv040b-90jds29al016d70tfi010eam29lv040b-70jfam29lv010b-70edam29lv040b-70jd
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FDD047
Abstract: SA70 SA71
Contextual Info: Am29BDS323D Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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FDD047
Abstract: SA70 SA71
Contextual Info: PRELIMINARY Am29BDS323D 32 Megabit 2 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • Single 1.8 volt read, program and erase (1.7 to 1.9 volt) ■ Multiplexed Data and Address for reduced I/O
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am29bds323d16-bitfdd047sa70+1sa71
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FDD047
Abstract: SA70 SA71
Contextual Info: PRELIMINARY Am29BDS323D 32 Megabit 2 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • Single 1.8 volt read, program and erase (1.7 to 1.9 volt) ■ Multiplexed Data and Address for reduced I/O
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