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FDC86244 Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDC86244		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 2.3A 6SSOT	Original	PDF		7
FDC86244		VBsemi Electronics Co Ltd	N-Channel 100 V MOSFET with 0.095 ohm RDS(on) at VGS = 10 V, 3.2 A continuous drain current, 4.2 nC gate charge, in a TSOP-6 package, compliant to RoHS and halogen-free standards.	Original	PDF

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onsemi


onsemi FDC86244 N-Channel Shielded Gate Power Trench? MOSFET, 150 V, 2.3 A, 144 mO - Tape and Reel (Alt: FDC86244)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	FDC86244	Tape & Reel			2,381	1 - 10 - 100 - 1000 - 10000 $0.31	Get Quote
	FDC86244	Tape & Reel		21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.32	Buy Now
Mouser Electronics	FDC86244		2,529			1 $1.54 10 $0.97 100 $0.64 1000 $0.50 10000 $0.50	Buy Now
Verical ()	FDC86244		3,626		777	1 - 10 - 100 - 1000 $0.45 10000 $0.40	Buy Now
	FDC86244		3,000		777	1 - 10 - 100 - 1000 $0.45 10000 $0.40	Buy Now
	FDC86244		1,081		17	1 - 10 - 100 $0.44 1000 $0.36 10000 $0.36	Buy Now
Arrow Electronics	FDC86244	Cut Strips	1,081	21 Weeks	1	1 $0.63 10 $0.52 100 $0.44 1000 $0.36 10000 $0.36	Buy Now
Future Electronics	FDC86244	Reel		30 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.76	Buy Now

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Rochester Electronics	FDC86244		6,626		1	1 - 10 - 100 $0.43 1000 $0.36 10000 $0.32	Buy Now
TME	FDC86244				3,000	1 - 10 - 100 - 1000 - 10000 $0.41	Get Quote
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Avnet Asia	FDC86244			21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.34	Buy Now
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EBV Elektronik	FDC86244			23 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	FDC86244		2,722			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FDC86244 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FDC86244 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 2.3 A, 144 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been	Original	FDC86244	PDF
FDC86244 Abstract: ssot-6 Contextual Info: FDC86244 N-Channel Power Trench MOSFET 150 V, 2.3 A, 144 mΩ Features General Description Max rDS on = 144 mΩ at VGS = 10 V, ID = 2.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and	Original	FDC86244 FDC86244 ssot-6	PDF
Contextual Info: FDC86244 N-Channel Power Trench MOSFET 150 V, 2.3 A, 144 mΩ Features General Description ̈ Max rDS on = 144 mΩ at VGS = 10 V, ID = 2.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and	Original	FDC86244	PDF
CTX03-18842-R Abstract: MAX5974C B2100-13-F MAGJACK rj45 connector GA355QR7GF222KW awp top mark MAX5974CETE CTX0318842 Contextual Info: 19-5262; Rev 0; 11/11 MAX5974C Evaluation Kit Evaluates: MAX5974C General Description The EV kit features a galvanically isolated 25W, 250kHz switching-frequency, active-clamped, synchronous-rectified forward DC-DC converter using the IC. The device circuit achieves high efficiency up to 93.5% using a	Original	MAX5974C MAX5974C 250kHz MAX5969B Products10 CTX03-18842-R B2100-13-F MAGJACK rj45 connector GA355QR7GF222KW awp top mark MAX5974CETE CTX0318842	PDF