FDC86244 Search Results
FDC86244 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| FDC86244 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 2.3A 6SSOT | Original | 7 |
FDC86244 Price and Stock
onsemi FDC86244MOSFET N-CH 150V 2.3A SUPERSOT6 |
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FDC86244 | Reel | 3,000 |
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FDC86244 | Reel | 34 Weeks | 3,000 |
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FDC86244 | 3,000 |
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FDC86244 | 77,870 |
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FDC86244 | 3,000 |
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FDC86244 | 48,000 | 1 |
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Fairchild Semiconductor Corporation FDC86244FDC86244 by Fairchild is an N-Channel MOSFET with 150 V, 2.3 A, and 144 mOhm Rds(on) in a compact SuperSOT-6 package, ideal for efficient power management applications. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDC86244 | 3,000 |
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FDC86244 | 87,952 |
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FDC86244 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDC86244 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 2.3 A, 144 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been |
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FDC86244 | |
FDC86244
Abstract: ssot-6
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FDC86244 FDC86244 ssot-6 | |
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Contextual Info: FDC86244 N-Channel Power Trench MOSFET 150 V, 2.3 A, 144 mΩ Features General Description ̈ Max rDS on = 144 mΩ at VGS = 10 V, ID = 2.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and |
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FDC86244 | |
CTX03-18842-R
Abstract: MAX5974C B2100-13-F MAGJACK rj45 connector GA355QR7GF222KW awp top mark MAX5974CETE CTX0318842
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MAX5974C MAX5974C 250kHz MAX5969B Products10 CTX03-18842-R B2100-13-F MAGJACK rj45 connector GA355QR7GF222KW awp top mark MAX5974CETE CTX0318842 |