FDC8601 Search Results
FDC8601 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| FDC8601 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TRENCH SSOT-6 | Original | 7 |
FDC8601 Price and Stock
onsemi FDC8601MOSFETs 100V N-Channel PowerTrench MOSFET |
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FDC8601 | 12,494 |
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FDC8601 | 24,000 | 3,000 |
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FDC8601 | Reel | 24 Weeks | 3,000 |
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FDC8601 |
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FDC8601 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDC8601 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 2.7 A, 109 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been |
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FDC8601 | |
FDC8601Contextual Info: FDC8601 N-Channel Power Trench MOSFET 100 V, 2.7 A, 109 mΩ Features General Description Max rDS on = 109 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and |
Original |
FDC8601 FDC8601 | |
FDC8601Contextual Info: FDC8601 N-Channel Power Trench MOSFET 100 V, 2.7 A, 109 mΩ Features General Description ̈ Max rDS on = 109 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and |
Original |
FDC8601 FDC8601 |