FDC8601 Search Results
FDC8601 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDC8601 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TRENCH SSOT-6 | Original | 7 |
FDC8601 Price and Stock
onsemi FDC8601MOSFET N-CH 100V 2.7A SUPERSOT6 |
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FDC8601 | Cut Tape | 5,979 | 1 |
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FDC8601 | Reel | 16 Weeks | 3,000 |
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FDC8601 | 12,029 |
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FDC8601 | 6,331 | 424 |
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FDC8601 | Reel | 3,000 |
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FDC8601 | Reel | 16 Weeks | 3,000 |
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FDC8601 |
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FDC8601 | 9,889 | 1 |
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FDC8601 | 3,000 |
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FDC8601 | 3,000 |
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FDC8601 | 16 Weeks | 3,000 |
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FDC8601 | 17 Weeks | 3,000 |
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FDC8601 | Cut Tape | 2,289 | 0 Weeks, 1 Days | 5 |
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FDC8601 | 18 Weeks | 3,000 |
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FDC8601 | 63,000 |
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FDC8601 | 3,000 |
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Fairchild Semiconductor Corporation FDC8601FDC8601 by Fairchild is a 100V, 109mOhm N-Channel Shielded Gate PowerTrench MOSFET in an SSOT-6 package, ideal for efficient power management and switching applications. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDC8601 | 3,000 |
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FDC8601 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDC8601 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 2.7 A, 109 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been |
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FDC8601 | |
FDC8601Contextual Info: FDC8601 N-Channel Power Trench MOSFET 100 V, 2.7 A, 109 mΩ Features General Description Max rDS on = 109 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and |
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FDC8601 FDC8601 | |
FDC8601Contextual Info: FDC8601 N-Channel Power Trench MOSFET 100 V, 2.7 A, 109 mΩ Features General Description ̈ Max rDS on = 109 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and |
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FDC8601 FDC8601 |