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    FDB035N10A Search Results

    FDB035N10A Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDB035N10A
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 120A D2PAK Original PDF 9
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    FDB035N10A Price and Stock

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    onsemi FDB035N10A

    MOSFET N-CH 100V 120A D2PAK
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    DigiKey () FDB035N10A Cut Tape 917 1
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    FDB035N10A Digi-Reel 917 1
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    Onlinecomponents.com FDB035N10A
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    Chip One Stop FDB035N10A Cut Tape 510 0 Weeks, 1 Days 1
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    Chip Stock FDB035N10A 11,100
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    EBV Elektronik FDB035N10A 24 Weeks 800
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    onsemi FDB035N10A (POWERTRENCH)

    Mosfet, N-Ch, 214A, 100V, To-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.003Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Onsemi FDB035N10A
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    Newark FDB035N10A (POWERTRENCH) Cut Tape 205 1
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    • 100 $4.71
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    Fairchild Semiconductor Corporation FDB035N10A

    MOSFET N-CH 100V 120A D2PAK
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    Win Source Electronics FDB035N10A 9,600
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    FDB035N10A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    solar charge circuit max 856

    Abstract: FDB035N10A
    Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.5 mΩ Features Description • RDS on = 3.0 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		FDB035N10A FDB035N10A solar charge circuit max 856 PDF

    TO254P1524X482-3N

    Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100V, 214A, 3.5mΩ Features Description • RDS on = 3.0mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDB035N10A FDB035N10A TO254P1524X482-3N PDF

    Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100V, 176A, 3.5mW Features Description • RDS on = 3.0mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDB035N10A FDB035N10A PDF

    Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.5 mΩ Features Description • RDS on = 3.0 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		FDB035N10A PDF

    dual diode marking A3

    Contextual Info: FDB035N10A tm N-Channel PowerTrench MOSFET 100V, 214A, 3.5mΩ Features Description • RDS on = 3.0mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDB035N10A FDB035N10A dual diode marking A3 PDF