FD100H06A5 Search Results

Contextual Info: Preliminary Data Sheet PD-20201 01/01 FD100H06A5BT Fred Die in Wafer Form a 0.35 ± 0.01 0.014 ± 0.0004 c 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 2. CONTROLLING DIMENSION (INCH): b C d NOTES: A 40 (1.57) Wafer flat alligned with side b of the die

FD100H06A5B

Abstract: FD100H06A5F 8ETH06 FD100H06A5P FD100H06A5R MIL-HDBK-263 S1025
Contextual Info: PD - 20201 rev.C FD100H06A5B FRED Die in Wafer Form z z 600V VF = 2.4 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter

Contextual Info: Preliminary Data Sheet PD-20531 11/00 FD100H06A5BT Fred Die in Wafer Form a 0.35 ± 0.01 0.014 ± 0.0004 c 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 2. CONTROLLING DIMENSION (INCH): b C d NOTES: A 40 (1.57) Wafer flat alligned with side b of the die

semitec

Abstract: 8ETH06 S1025 FD100H06A5B Semitec S1025
Contextual Info: Preliminary Data Sheet PD-20175 01/01 FD100H06A5BT Fred Die in Wafer Form a 0.35 ± 0.01 0.014 ± 0.0004 c 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 2. CONTROLLING DIMENSION (INCH): b C d NOTES: A 40 (1.57) Wafer flat alligned with side b of the die

FD100H06A5B

Abstract: PD-20201 8ETH06 S1025
Contextual Info: Preliminary Data Sheet PD-20201 rev. A 06/01 FD100H06A5B Fred Die in Wafer Form a 0.35 ± 0.01 0.014 ± 0.0004 c 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 2. CONTROLLING DIMENSION (INCH): b C d NOTES: A 40 (1.57) Wafer flat alligned with side b of the die

IRF1010 E DATASHEET

Abstract: IRF1010 IRG4BC30FD1 igbt rectifier circuit IRG4BC
Contextual Info: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

swiching transistor

Abstract: 9561 600v 8A ultra fast recovery diode to220
Contextual Info: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRF1010

Abstract: IRG4BC30FD1 TO220AB IGBT
Contextual Info: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

555 triangular wave

Abstract: IRG4BC30FD1PBF
Contextual Info: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter