FCSI0699M200 Search Results
FCSI0699M200 Datasheets Context Search
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fujitsu power amplifier GHz
Abstract: FMM5805
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fmm5805x5-20ghzthe17fcsi0699m200+2 | |
0 281 002 924
Abstract: 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic
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fmm5806x26dbmfcsi0699m2000 281 002 924+3 | |
fujitsu power amplifier GHzContextual Info: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology |
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fmm5806x26dbmfcsi0699m200fujitsu power amplifier ghz | |
FMM5805XContextual Info: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC |
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fmm5805x5-20ghzthe17fcsi0699m200 | |
FUJITSU SEMICONDUCTOR phemt
Abstract: FMM5806X fujitsu power amplifier GHz power amplifier mmic
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fmm5806x26dbmfcsi0699m200fujitsu semiconductor phemt+2 | |
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Contextual Info: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC |
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fmm5805x5-20ghzthe17fcsi0699m200 |