FCH10A03L Search Results

Contextual Info: 10A Avg. 30 Volts SBD FCH10A03L •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitve Peak Surge Reverse Voltage

Contextual Info: SBD T y p e : FCH10 FCH10A03L 10A03L OUTLINE DRAWING FEATURES FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Extremely Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation

Contextual Info: SBD T y p e : FCH10A03L •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings

FCH10A03L

Contextual Info: SBD T y p e : FCH10 FCH10A03L 10A03L OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Extremely Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation

FCH10A03L

Abstract: DIODE BY 255 Diode U44
Contextual Info: SCHOTTKY BARRIER DIODE FCH10A03L i o a /s o v 3.11.1221 FE A T U R E S *" o Sim ilar to T 0 220AB Case "Ie ' 2.851.112 2 .55 .100) o Fully Molded Isolation - /• 3 .< K .i i r t ) D ,A MAX 4.81.1891 MAXj & A fi.9l/272> « T O W\ 1 * il r u .M .a o E xtrem ely Low Forw ard Voltage Drop

Contextual Info: SBD T y p e : FCH10A03L •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings

Contextual Info: SCHOTTKY BARRIER DIODE FCH10A03L io a / so v FEATURES o S im ilar o Fully to T 0-220A B Case M olded Isolation o E x tre m e ly L ow F o rw a rd V oltage D rop o D u a l D iodes-C athode C om m on o Low P o w er Loss, H igh E fficiency o H igh S urge C apability

FCH10A03L

Contextual Info: 10A Avg. 30 Volts SBD FCH10A03L •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitve Peak Surge Reverse Voltage

Contextual Info: SBD T y p e : FCH10 FCH10A03L 10A03L OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Extremely Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation

a03L

Abstract: FCH10A03L
Contextual Info: SBD T y p e : FCH10 FCH10A03L 10A03L OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Extremely Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation

Contextual Info: SBD T y p e : FCH10A03L •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

FRH20A10

Abstract: FCH20A20 FRH20A20 Schottky Diodes 5A TC108 TC116 TC105 FCH10 fcq06a06 FCL30A015 tc122 25
Contextual Info: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline TO-220AB Full Pack FSH04A03LB 30 4 Tc=132℃ 100 0.56 1 150 14B FSH04A04B FSH04A06B FSH04A10B 40 60 100 4 4 4 Tc=131℃ Tc=129℃ Tc=126℃

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

Contextual Info: SCHOTTKY BARRIER DIODE F C H 10 A 0 3 L io a / sov 3.11.122 FEATURES r~ A 6.91 & J.8I.1S9I MAX] ; o S im ilar to T 0-220A B C ase MAX - ? :m \ o F ully M olded Iso latio n 2.85 112) 2.55(.100) U.ft.5 o E x tre m e ly L ow F o rw a rd V o ltag e D rop o D u a l D iodes-C athode C om m on

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

F10P100

Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Contextual Info: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04