FC12 Search Results

2SA1496

Abstract: FC129
Contextual Info: Ordering number:EN3283 FC129 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistance (R1=10kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

Contextual Info: SANYO SEM ICO ND UC TOR CORP 22E D 7*n707fa 00073=12 4 FC121 T - 37-/3 PNP Epitaxial Planar Silicon Com posite Transistor 2066 Switching Applications with Bias Resistances R1=2.2kO, R2=10k0 3190 Features • On-chip bias resistances (Ri=2.2kQ,R2=lOkfl)

C 100nF

Contextual Info: FC1224 Future Communications Integrated circuit Inc. Wireless IC for PCS Transmitter FEATURES l Dedicated design for PCS applications l Elimination of additional image-reject filter between up-converter and drive amplifier AMPS_CDMA VCC_ESD IF_INM IF_INP 28

CQ05

Contextual Info: OIL CAPACITOR FC11LG107K1 Dimension mm Test voltage {1 minute) Rated voltage Type W 1^5 2250VDC S 1500VDC FC11LH506K1 S FC12LH257K1 2000VDC 3000VDC FC11LK256K1 S FC12LK1256K1 3000VDC 4500VDC F C 89 se rie s -?^ t i ^ — / \° - =1 > yy- x r 130 200 1^5

KTC-FC1203N

Abstract: I8032 KTC-FC1203 FC1203N toshiba flash card HD11 TQFP100 ide 2.5 DASP nand flash socket DATABUS10
Contextual Info: KTC-FC1203N ATA Flash Controller KTC Confidential Key Technology Corp. FC1203N Single Chip ATA Flash Controller General Descriptions: The KTC-FC1203N single chip controller is designed for the high capacity and high performance True IDE, PC Card ATA as well as

2SA1496

Abstract: FC127
Contextual Info: Ordering number:EN3281 FC127 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistance (R1=10kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

MARKING SG

Abstract: 2SC3898 FC124
Contextual Info: Ordering number:EN3278 FC124 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistance (R1=47kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

2SA1508

Abstract: FC123 marking 123
Contextual Info: Ordering number:EN3277 FC123 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistance (R1=47kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

2SC3859

Abstract: D059 FC128 ITR10521 ITR10522 ITR10523 ITR10524
Contextual Info: 注文コード No. N 3 2 8 2 FC128 No. N 3 2 8 2 70500 FC128 特長 NPN エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用（バイアス抵抗内蔵） ・バイアス抵抗内蔵（R1=10kΩ） 。 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅にアップできる。

2SC4639

Abstract: FC12
Contextual Info: Ordering number:EN3482 FC12 TR:NPN Epitaxial Plannar Silicon Transistor FET:N-Channel Junction Silicon Transistor High-Frequency Amp, AM Applications, Low-Frequency Amp Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

2SA1508

Abstract: FC125
Contextual Info: Ordering number:EN3279 FC125 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistance R1=47kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

K7A803609B-PC25

Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Contextual Info: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15

2SA1508

Abstract: D059 FC123 ITR10501 ITR10502 ITR10503 ITR10504
Contextual Info: 注文コード No. N 3 2 7 7 FC123 No. N3277 71000 FC123 特長 PNP エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用（バイアス抵抗内蔵） ・バイアス抵抗内蔵（R1=47kΩ） 。 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅にアップできる。

2SA1496

Abstract: D059 FC127 ITR10517 ITR10518 ITR10519 ITR10520
Contextual Info: 注文コード No. N 3 2 8 1 FC127 No. N 3 2 8 1 71000 FC127 特長 PNP エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用（バイアス抵抗内蔵） ・バイアス抵抗内蔵（R1=10kΩ） 。 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅にアップできる。

2SA1496

Abstract: D059 FC129 ITR10525 ITR10526 ITR10527 ITR10528
Contextual Info: 注文コード No. N 3 2 8 3 FC129 No. N 3 2 8 3 70500 FC129 特長 PNP エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用（バイアス抵抗内蔵） ・バイアス抵抗内蔵（R1=10kΩ） 。 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅にアップできる。

2SC3142

Abstract: FC120 marking 7T transistor
Contextual Info: Ordering number:EN3062A FC120 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

2SC3142

Abstract: FC120 marking 7T transistor
Contextual Info: Ordering number:EN3062A FC120 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

2SC3898

Abstract: FC124
Contextual Info: Ordering number:EN3278 FC124 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistance (R1=47kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

2SA1508

Abstract: FC123
Contextual Info: Ordering number:EN3277 FC123 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistance (R1=47kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

EN3279

Contextual Info: Ordering number : EN3279 r No.3279 FC125 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications _ with Bias Resistance Features • On-chip bias resistance (R1 “ 47kfi) • Composite type with 2 transistors contained in the CP package currently in use, improving the

Contextual Info: FC1205 Future Communications Integrated circuit Inc. Receiver RFIC for Space Diversity PCS DESCRIPTION FEATURES The FC1205 is designed primarily for a front-end of space diversity receiver system MSM5500 series , operating in PCS CDMA mode. The IC contains two low-noise amplifiers

2SA1502

Abstract: FC121 ITR10497 ITR10498 ITR10499 ITR10500 PT 10k
Contextual Info: 注文コード No. N 3 1 9 0 FC121 No. N3190 71000 FC121 特長 PNP エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用（バイアス抵抗内蔵） ・バイアス抵抗（R1=2.2kΩ, R2=10kΩ）を内蔵。 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅にアップできる。

ITR10510

Abstract: 2SA1508 D059 FC125 ITR10509 ITR10511 ITR10512
Contextual Info: 注文コード No. N 3 2 7 9 FC125 No. N3279 71000 FC125 特長 PNP エピタキシァルプレーナ形シリコン複合トランジスタ スイッチング用（バイアス抵抗内蔵） ・バイアス抵抗内蔵（R1=47kΩ） 。 ・従来の CP にトランジスタを 2 素子内蔵した複合タイプであり実装基板効率が大幅にアップできる。

"Marking 121"

Abstract: 2SA1502 FC121
Contextual Info: Ordering number:EN3190 FC121 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistances (R1=2.2kΩ, R2=10kΩ). · Composite type with 2 transistors contained in the