FAST REVERSE RECOVERY TIME OF LED Search Results

DN06050

Abstract: capacitor 2,2 nF thru hole MUR240 NCP1216 dip7 led driver ECQU3A104ML "drum core" axial inductor ECA-2EHG100 FQPF3N25 MSS1278
Contextual Info: DN06050/D Design Note – DN06050/D 7 W, 90-135 Vac, 500 mA LED Driver Device NCP1216 MUR240 Application LED Driver Input Voltage 90-135 Vac Output Power 7 Watts Topology Buck I/O Isolation no Figure 1: Basic schematic Circuit Description This non-isolated constant current buck LED driver

MOTOROLA brushless dc controller schematic

Abstract: junctions mosfet schematic dc motor driver motorola AN897 MOTOROLA brushless dc controller MDC1000 MOSFET 1hp MC33033 DL135 mc33035
Contextual Info: AR341 POWER MOSFET, 1HP BRUSHLESS DC MOTOR DRIVE WITHSTANDS COMMUTATION STRESSES Prepared by Ken Berringer Motorola, Inc. Phoenix, Arizona Reprinted with permission from PowerConversion & Intelligent Motion, June 1990 issue. 1990 Intertec Communications Inc. All Rights Reserved.

hv9931

Abstract: thyristor CS1 2.2 microfarad 400v ac capacitor dimmer chokes AN-H52 BAV99 DN3545N8 MMBT2222A 600w dimmer AC to DC transformerless powersupply
Contextual Info: AN-H52 Application Note HV9931 Unity Power Factor LED Lamp Driver Introduction Development of high-brightness light emitting diodes LED revolutionized the lighting industry in the recent years. Semiconductor light sources replace incandescent bulbs in an

rifa pme 285 mb

Abstract: PME 285 MB RIFA rifa pme capacitor rifa pme 285 mb rifa pme 285 rifa pme 289 mb rifa pme 289 MA EON Q32B MC33035 SCR DC permanent magnet motor
Contextual Info: I AN1101 One-Horsepower Off-Line Brushless Permanent Magnet Motor Drive Ken Berringer Semiconductor Products Sector Discrete Applications Laboratory ruggedness allow the diode to withstand the high stresses im­ INTRODUCTION posed by forced commutation. Energy rated E-FETs are

lead acid battery

Contextual Info: CB Battery Chargers - Single Phase With the CB Battery Charger Line, Altech offers a highly reliable battery management solution. Operating at single phase Input Voltages of 115-230-277 VAC, the devices supply an Output of 12VDC and up to 35A or 24VDC and up to 20A.

BY228 equivalent

Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

CBI243A

Contextual Info: Features: CBI243A DC UPS • • • • • • • • INPUT OUTPUT PROTECTION LOAD OUTPUT BATTERY OUTPUT OTHERS Input: Single-phase 115 - 277 VAC Output Load: power supply 24 VDC; 3 A Output: Battery charging 24 VDC; 3 A Suited for the following battery types:

220VAC to 12VDC 2A circuit diagram

Abstract: 240vac to 12vdc rectifier circuit A704WFT A704 02N60H 220VAC to 12VDC led light circuit diagram AC 12V to DC 12 V with Bridge Diode Diagram bridge rectifier 240V AC smd 1206- 100ohm resistor 220VAC to 12VDC 1A circuit diagram
Contextual Info: A704 SWITCHING MODE LED DRIVER www.addmtek.com DESCRIPTION FEATURES The A704 is a PWM high efficiency LED driver controller. The LED string is driven at constant current rather than constant voltage, thus providing constant light output and enhanced reliability.

CBI2410A

Contextual Info: Features: CBI2410A DC UPS • • • • • • • • INPUT OUTPUT PROTECTION LOAD OUTPUT BATTERY OUTPUT OTHERS Input: Single-phase 115 - 277 VAC Output Load: power supply 24 VDC; 10 A Output: Battery charging 24 VDC; 10 A Suited for the following battery types:

P-Channel MOSFET 800v

Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
Contextual Info: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International

Contextual Info: Bulletin 12092/B International S Rectifier s d 553C.ssol s e r ie s FAST RECOVERY DIODES Hockey Puk Version Features • High pow er FAST recovery diode series ■ 6.0 ps recovery tim e ■ High voltage ratings up to 4500V 560A ■ High current ca p a bility

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes Low-Profile SlimSMA and SMF Packages FRED Pt 1 A, 2 A, and 3 A Ultrafast Recovery Rectifiers AEC-Q101 Qualified for Automotive and Telecom Applications KEY BENEFITS • 1 A devices reduce switching losses

P-Channel MOSFET 800v

Contextual Info: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International

WLCSP-26 3d

Contextual Info: FDZ3N513ZT Integrated NMOS and Schottky Diode Features General Description ̈ Monolithic NMOS and Schottky Diode The FDZ3N513ZT is a monolithic NMOS/ Schottky combination FETky and is designed and wired to function as a discontinuous conduction mode (DCM) boost LED power train for mobile

CB243A

Contextual Info: Features: CB243A Battery Charger • Input: Single-phase 115 - 230 - 277 VAC • Output: Battery charging 24 VDC; 3 A • Suited for the following battery types: Open Lead Acid, Sealed Lead Acid, lead Gel and Ni-Cd option • Automatic diagnostic of battery status. Charging

vogt inductors IL 050 321 31 01

Abstract: vogt IL 050 321 31 01 VJ1812Y104KXCAT bc 036 47uf capacitor MUR120T3 vogt inductors 5073NW1K000J12AFX IRS2540 vogt -t3 MRC10
Contextual Info: IRPLLED1 IRPLLED1 350mA to 1.5A High Voltage LED Driver using IRS2540 Table of Contents Page 1. Introduction……………………………………………………………….….1 2. Constant Current

Contextual Info: MB03N65D0000000 N-Ch 650V Fast Switching MOSFETs General Description Product Summery The MB03N65D is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter

IRS2541

Abstract: IRS2540 IRPLLED1 vogt IL 050 321 31 01 5073NW1K000J12AFX IRS254 VJ1812Y104KXCAT MINI-MELF DIODE yellow CATHODE yageo RC 1206 vogt inductors IL 050 321 31 01
Contextual Info: IRPLLED1 IRPLLED1 High Voltage LED Driver using the IRS2540 Table of Contents Page 1. Introduction……………………………………………………………….….1 2. Constant Current

Contextual Info: MB02N65F0000000 N-Ch 650V Fast Switching MOSFETs General Description Product Summery The MB02N65F is the highest performance N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MB03N65F0000000 N-Ch 650V Fast Switching MOSFETs General Description Product Summery The MB03N65F is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter

irf 100v 300A

Abstract: MOSFET IRF 630 IRFR9120N IRFU9120N IRFR9120NPBF IRF P-Channel mosfet
Contextual Info: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω

MA2YF80

Abstract: Flash 04501 010-ir tns120
Contextual Info: Contribute to shorten the charging time of strobe circuit High-voltage fast recovery diode MA2YF80 „ Overview MA2YF80 is a Fast Recovery Diode, adequate for high-voltage. As the device has high-speed trr characteristic and Low IR Peak characteristic, it enables to reduce switching-loss drastically.

Contextual Info: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.3 A, 75 mΩ Features Description • RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior